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Volumn , Issue , 2011, Pages

Effects of alloy composition on multilevel operation in self-heating phase change memories

Author keywords

chalcogenide alloys; multilevel storage; phase change materials; Phase change memories; self heating

Indexed keywords

ACCURATE ANALYSIS; ALLOY COMPOSITIONS; BIT DENSITY; CHALCOGENIDE ALLOY; DEVICE ARCHITECTURES; MULTILEVEL PROGRAMMING; MULTILEVEL STORAGE; PHASE CHANGE; SCALING PROPERTIES; SELF-HEATING; THERMAL CHARACTERISTICS;

EID: 79959936440     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873226     Document Type: Article
Times cited : (11)

References (8)
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  • 3
    • 77955173535 scopus 로고    scopus 로고
    • Nanocomposite phase-change memory alloys for very high temperature data retention
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    • W. Czubatyj et al., "Nanocomposite Phase-Change Memory alloys for very high temperature data retention," Electron Dev. Lett., Aug 2010, vol 31, n. 8, pp. 869-871.
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    • Czubatyj, W.1
  • 4
    • 77957902355 scopus 로고    scopus 로고
    • On carbon doping to improve GeTe-based phase-change memory data retention at high temperature
    • May
    • G. Betti Beneventi, et al., "On carbon doping to improve GeTe-based phase-change memory data retention at high temperature," Proc. of Int. Memory Workshop, pp. 1-4, May 2010.
    • (2010) Proc. of Int. Memory Workshop , pp. 1-4
    • Betti Beneventi, G.1
  • 5
    • 79951843154 scopus 로고    scopus 로고
    • N-doped GeTe as performance booster for embedded phase-change memories
    • Dec.
    • A. Fantini, et al., "N-doped GeTe as performance booster for embedded phase-change memories," Proc. of Int. Electron Device Meeting, Dec. 2010.
    • (2010) Proc. of Int. Electron Device Meeting
    • Fantini, A.1
  • 6
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    • Voltage-driven partial-RESET multilevel programming in phase change memories
    • Oct.
    • S. Braga, et al. "Voltage-driven partial-RESET multilevel programming in Phase Change Memories,". IEEE Trans. on Electron Devices, vol. 57, no. 10, pp. 1-8, Oct. 2010.
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    • Braga, S.1
  • 7
    • 51949114502 scopus 로고    scopus 로고
    • Two-bit cell operation in diode-switch phase change memory cells with 90nm technology
    • D.-H. Kang et al., " Two-bit Cell Operation in Diode-Switch Phase Change Memory Cells with 90nm Technology", VLSI Symp. Tech Dig., pp. 98-99, 2008.
    • (2008) VLSI Symp. Tech Dig. , pp. 98-99
    • Kang, D.-H.1
  • 8
    • 3042615074 scopus 로고    scopus 로고
    • Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories
    • A. Itri et al., "Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories", Proc. of Int. Reliability Physics Symp., pp.209-215, 2004.
    • (2004) Proc. of Int. Reliability Physics Symp. , pp. 209-215
    • Itri, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.