Comparative assessment of GST and GeTe materials for application to embedded phase-change memory devices

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Fantini, A ^a   Perniola, L ^a   Armand, M ^a   Nodin, J F ^a   Sousa, V ^a   Persico, A ^a   Cluzel, J ^a   Jahan, C ^a   Maitrejean, S ^a   Lhostis, S ^b   Roule, A ^a   Dressler, C ^a   Reimbold, G ^a   DeSalvo, B ^a   Mazoyer, P ^b   Bensahel, D ^b   Boulanger, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE PRODUCTS; COMPARATIVE ASSESSMENT; DATA-RETENTION; ELECTRICAL PERFORMANCE; EMBEDDED MEMORIES; EMBEDDED PCS; HIGH TEMPERATURE; MATERIAL SCREENING; MEMORY APPLICATIONS; MEMORY CELL; OPTICAL REFLECTIVITY; PHASE CHANGES; RESET CURRENTS; RESISTIVITY MEASUREMENT;

CELL MEMBRANES; SYSTEM THEORY;

PHASE CHANGE MEMORY;

EID: 70349979937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090585     Document Type: Conference Paper

References (6)

1. S. Lai, "Non-Volatile Memory Technologies: the Quest for Ever Lower Cost", Techn. Dig. of IEDM 2008.
2. A. Pirovano et al., "Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond", Solid State Electronics, Volume 52, Issue 9, pp. 1467-1472, 2008.
3. S. Raoux, et al., "Phase-change random access memory: A scalable technology", IBM Journal of Research and Development, Volume 52, Number 4/5, p.465, 2008.
4. T. Morikawa et al. .,Doped In-Ge-Te phase change memory featuring stable operation and good data retention", Techn. Dig. of IEDM 2007.
5. N. Matsuzaki et al., "Oxygen-doped GeSbTe phase-change memory cells featuring 1.5V/100 μA Standard 0.13 μm CMOS operations", Techn. Dig. of IEDM 2005.
6. H. Horii et al., "A novel cell technology using N-doped GeSbTe films for phase change RAM ", Proc. of VLSI 2003.