On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Betti Beneventi, G ^a,b   Gourvest, E ^c,d   Fantini, A ^a   Perniola, L ^a   Sousa, V ^a   Maitrejean, S ^a   Bastien, J C ^a,e   Bastard, A ^a,c   Fargeix, A ^a   Hyot, B ^a   Jahan, C ^a   Nodin, J F ^a   Persico, A ^a   Blachier, D ^a   Toffoli, A ^a   Loubriat, S ^a   Roule, A ^a   Lhostis, S ^a,c   Feldis, H ^a   Reimbold, G ^a   Billon, T ^a   De Salvo, B ^a   Larcher, L ^b   Pavan, P ^b   Bensahel, D ^c   Mazoyer, P ^c   Annunziata, R ^c   Boulanger, F ^a   more..

^a CEA LETI   (France)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (France)

^d GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^e UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CARBON DOPING; CHALCOGENIDE ALLOY; CRYSTALLINE STATE; DATA RETENTION; ELECTRICAL ANALYSIS; ELECTRICAL DATA; ELECTRICAL PROPERTY; EMBEDDED APPLICATION; HIGH TEMPERATURE; PHASE CHANGES; PHYSICO-CHEMICALS; PROGRAMMING SPEED;

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC PROPERTIES;

PHASE CHANGE MEMORY;

EID: 77957902355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488328     Document Type: Conference Paper

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