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Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

Evidence of Germanium precipitation in phase-change Ge1-xTe x thin films by Raman scattering

(7) Gourvest, E a Lhostis, S a Kreisel, J b Armand, M c Maitrejean, S c Roule, A c Valle C d

a STMICROELECTRONICS (France)

b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE (France)

c CEA LETI (France)

d Joseph Fourier University (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CHARACTERISTIC TEMPERATURE; CRYSTALLINE PHASE; CRYSTALLIZATION TEMPERATURE; GE CONTENT; IN-PHASE; IN-SITU ANNEALING; RICH PHASE; STARTING COMPOSITION;

CRYSTALLIZATION; PRECIPITATION (CHEMICAL); RAMAN SCATTERING; SCATTERING; TELLURIUM COMPOUNDS; THIN FILMS;

GERMANIUM;

EID: 67651253099 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3186077 Document Type: Article

Times cited : (39)

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