Oxygen-doped GeSbTe phase-change memory cells featuring 1.5-V/100-μA standard 0.13-μm CMOS operations

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 737-741

  Matsuzaki, N ^a   Kurotsuchi, K ^a   Matsui, Y ^a   Tonomura, O ^a   Yamamoto, N ^a   Fujisaki, Y ^a   Kitai, N ^a   Takemura, R ^a   Osada, K ^a   Hanzawa, S ^a   Moriya, H ^a   Iwasaki, T ^a   Kawahara, T ^a   Takaura, N ^a   Terao, M ^a   Matsuoka, M ^b   Moniwa, M ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRODES; GERMANIUM COMPOUNDS; OXYGEN; PHASE CHANGE MEMORY; TUNGSTEN;

GERMANIUM OXIDES; PHASE CHANGE MEMORY CELLS; THERMAL LIFETIME;

CMOS INTEGRATED CIRCUITS;

EID: 33847726227     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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