SCOPUS 정보 검색 플랫폼

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 11, 2011, Pages

Carrier transfer effect on transport in p-i-n structures with Ge quantum dots

(8) Lysenko, V S a Gomeniuk, Yu V a Strelchuk, V V a Nikolenko, A S a Kondratenko, S V b Kozyrev, Yu N c Rubezhanska, M Yu c Teichert, C d

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV (Ukraine)

c INSTITUTE OF SURFACE CHEMISTRY (Ukraine)

d UNIVERSITY OF LEOBEN (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053597369 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.115425 Document Type: Article

Times cited : (13)

References (42)

1
- 0000082066
- PLRBAQ 1098-0121 10.1103/PhysRevB.61.13721
- O. G. Schmidt and K. Eberl, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.61.13721 61, 13721 (2000).
- (2000) Phys. Rev. B , vol.61 , pp. 13721
- Schmidt, O.G.¹ Eberl, K.²

2
- 0036152574
- 0034-4885 10.1088/0034-4885/65/1/202
- K. Brunner, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/65/1/202 65, 27 (2002).
- (2002) Rep. Prog. Phys. , vol.65 , pp. 27
- Brunner, K.¹

3
- 0037847452
- Electron transport through double quantum dots
- DOI 10.1103/RevModPhys.75.1
- W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.75. 1 75, 1 (2003). (Pubitemid 36549937)
- (2003) Reviews of Modern Physics , vol.75 , Issue.1 , pp. 1-22
- Van Der Wiel, W.G.¹ De Franceschi, S.² Elzerman, J.M.³ Fujisawa, T.⁴ Tarucha, S.⁵ Kouwenhoven, L.P.⁶

4
- 0032047520
- PRLTAO 0031-9007 10.1103/PhysRevLett.80.3340
- S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and X. Wang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.80.3340 80, 3340 (1998).
- (1998) Phys. Rev. Lett. , vol.80 , pp. 3340
- Zhang, S.K.¹ Zhu, H.J.² Lu, F.³ Jiang, Z.M.⁴ Wang, X.⁵

5
- 0001511169
- PLRBAQ 1098-0121 10.1103/PhysRevB.60.1792
- K. Schmalz, I. N. Yassievich, P. Schittenhelm, and G. Abstreiter, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.60.1792 60, 1792 (1999).
- (1999) Phys. Rev. B , vol.60 , pp. 1792
- Schmalz, K.¹ Yassievich, I.N.² Schittenhelm, P.³ Abstreiter, G.⁴

6
- 0000831471
- APPLAB 0003-6951 10.1063/1.125927
- C. Miesner, O. Röthig, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125927 76, 1027 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1027
- Miesner, C.¹ Röthig, O.² Brunner, K.³ Abstreiter, G.⁴

7
- 0000170143
- 0003-6951 10.1063/1.123287
- J. L. Liu, W. G. Wu, A. Balandin, G. L. Jin, and K. L. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.123287 74, 185 (1999).
- (1999) Appl. Phys. Lett. , vol.74 , pp. 185
- Liu, J.L.¹ Wu, W.G.² Balandin, A.³ Jin, G.L.⁴ Wang, K.L.⁵

8
- 0000045740
- APPLAB 0003-6951 10.1063/1.117263
- P. Kruck, M. Helm, T. Fromherz, G. Bauer, J. F. Nützel, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.117263 69, 3372 (1996).
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3372
- Kruck, P.¹ Helm, M.² Fromherz, T.³ Bauer, G.⁴ Nützel, J.F.⁵ Abstreiter, G.⁶

9
- 0000331132
- 0003-6951 10.1063/1.107821
- J. S. Park, R. P. G. Karunasiri, and K. L. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.107821 61, 681 (1992).
- (1992) Appl. Phys. Lett. , vol.61 , pp. 681
- Park, J.S.¹ Karunasiri, R.P.G.² Wang, K.L.³

10
- 0000465642
- 0003-6951 10.1063/1.1326044
- N. Rapaport, E. Finkman, T. Brunhes, P. Boucaud, S. Sauvage, N. Yam, V. Le Tranh, and D. Bouchier, Appl. Phys. Lett. 0003-6951 10.1063/1.1326044 77, 3224 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3224
- Rapaport, N.¹ Finkman, E.² Brunhes, T.³ Boucaud, P.⁴ Sauvage, S.⁵ Yam, N.⁶ Le Tranh, V.⁷ Bouchier, D.⁸

11
- 0035585063
- 0370-1972 10.1002/1521-3951(200103)224:1<233::AID-PSSB233>3.0.CO;2- 7
- P. Boucaud, T. Brunhes, S. Sauvage, N. Yam, V. Le Thanh, D. Bouchier, N. Rappaport, and E. Finkman, Phys. Status Solidi B 0370-1972 10.1002/1521- 3951(200103)224:1<233::AID-PSSB233>3.0.CO;2-7 224, 233 (2001).
- (2001) Phys. Status Solidi B , vol.224 , pp. 233
- Boucaud, P.¹ Brunhes, T.² Sauvage, S.³ Yam, N.⁴ Le Thanh, V.⁵ Bouchier, D.⁶ Rappaport, N.⁷ Finkman, E.⁸

12
- 79955986137
- 0003-6951 10.1063/1.1449525
- S. Tong, J. L. Liu, J. Wan, and K. L. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.1449525 80, 1189 (2001).
- (2001) Appl. Phys. Lett. , vol.80 , pp. 1189
- Tong, S.¹ Liu, J.L.² Wan, J.³ Wang, K.L.⁴

13
- 0035911464
- APPLAB 0003-6951 10.1063/1.1356454
- J. Wan, G. L. Jin, Z. M. Jiang, Y. H. Luo, J. L. Liu, and K. L. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1356454 78, 1763 (2001).
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1763
- Wan, J.¹ Jin, G.L.² Jiang, Z.M.³ Luo, Y.H.⁴ Liu, J.L.⁵ Wang, K.L.⁶

14
- 64549140047
- NNOTER 0957-4484 10.1088/0957-4484/20/5/055201
- D. W. Kwak, C. J. Park, Y. H. Lee, W. S. Kim, and H. Y. Cho, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/20/5/055201 20, 055201 (2009).
- (2009) Nanotechnology , vol.20 , pp. 055201
- Kwak, D.W.¹ Park, C.J.² Lee, Y.H.³ Kim, W.S.⁴ Cho, H.Y.⁵

15
- 0000133487
- PLRBAQ 1098-0121 10.1103/PhysRevB.58.R4262
- R. Leon, S. Fafard, P. G. Piva, S. Ruvimov, and Z. Liliental-Weber, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.58.R4262 58, R4262 (1998).
- (1998) Phys. Rev. B , vol.58 , pp. 4262
- Leon, R.¹ Fafard, S.² Piva, P.G.³ Ruvimov, S.⁴ Liliental-Weber, Z.⁵

16
- 0028515009
- 0003-6951 10.1063/1.112060
- S. Fafard, D. Leonard, J. L. Merz, and P. M. Petroff, Appl. Phys. Lett. 0003-6951 10.1063/1.112060 65, 1388 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1388
- Fafard, S.¹ Leonard, D.² Merz, J.L.³ Petroff, P.M.⁴

17
- 0032047520
- PRLTAO 0031-9007 10.1103/PhysRevLett.80.3340
- S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and X. Wang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.80.3340 80, 3340 (1998).
- (1998) Phys. Rev. Lett. , vol.80 , pp. 3340
- Zhang, S.K.¹ Zhu, H.J.² Lu, F.³ Jiang, Z.M.⁴ Wang, X.⁵

18
- 0000096703
- PLRBAQ 1098-0121 10.1103/PhysRevB.59.12598
- A. I. Yakimov, C. J. Adkins, R. Boucher, A. V. Dvurechenskii, A. I. Nikiforov, O. P. Pchelyakov, and G. Biskupski, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.59.12598 59, 12598 (1999).
- (1999) Phys. Rev. B , vol.59 , pp. 12598
- Yakimov, A.I.¹ Adkins, C.J.² Boucher, R.³ Dvurechenskii, A.V.⁴ Nikiforov, A.I.⁵ Pchelyakov, O.P.⁶ Biskupski, G.⁷

19
- 0031101108
- JAPIAU 0021-8979 10.1063/1.364249
- F. Lu, S. Wang, H. Jung, Z. Zhu, and T. Yao, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.364249 81, 2425 (1997).
- (1997) J. Appl. Phys. , vol.81 , pp. 2425
- Lu, F.¹ Wang, S.² Jung, H.³ Zhu, Z.⁴ Yao, T.⁵

20
- 0000757282
- APPLAB 0003-6951 10.1063/1.1320036
- C. Miesner, T. Asperger, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1320036 77, 2704 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2704
- Miesner, C.¹ Asperger, T.² Brunner, K.³ Abstreiter, G.⁴

21
- 0009379671
- PLRBAQ 1098-0121 10.1103/PhysRevB.50.14287
- K. Schmalz, I. N. Yassievich, H. Rücker, H. G. Grimmeiss, H. Frankenfeld, W. Mehr, H. J. Osten, P. Schley, and H. P. Zeindl, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.50.14287 50, 14287 (1994).
- (1994) Phys. Rev. B , vol.50 , pp. 14287
- Schmalz, K.¹ Yassievich, I.N.² Rücker, H.³ Grimmeiss, H.G.⁴ Frankenfeld, H.⁵ Mehr, W.⁶ Osten, H.J.⁷ Schley, P.⁸ Zeindl, H.P.⁹

22
- 0037222665
- SSCOA4 0038-1098 10.1016/S0038-1098(02)00765-2
- H. Zhou, S. Huang, Y. Rao, Z. Jiang, and F. Lu, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(02)00765-2 125, 161 (2003).
- (2003) Solid State Commun. , vol.125 , pp. 161
- Zhou, H.¹ Huang, S.² Rao, Y.³ Jiang, Z.⁴ Lu, F.⁵

23
- 3643143147
- PRLTAO 0031-9007 10.1103/PhysRevLett.65.1020
- Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.65.1020 65, 1020 (1990).
- (1990) Phys. Rev. Lett. , vol.65 , pp. 1020
- Mo, Y.-W.¹ Savage, D.E.² Swartzentruber, B.S.³ Lagally, M.G.⁴

24
- 0032535998
- Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes
- DOI 10.1126/science.279.5349.353
- G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science SCIEAS 0036-8075 10.1126/science.279.5349.353 279, 353 (1998). (Pubitemid 28063365)
- (1998) Science , vol.279 , Issue.5349 , pp. 353-355
- Medeiros-Ribeiro, G.¹ Bratkovski, A.M.² Kamins, T.I.³ Ohlberg, D.A.A.⁴ Williams, R.S.⁵

25
- 54849414242
- 0021-8979 10.1063/1.372279
- A. V. Kolobov, J. Appl. Phys. 0021-8979 10.1063/1.372279 87, 2926 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 2926
- Kolobov, A.V.¹

26
- 33144464874
- Analysis of strain and intermixing in single-layer Ge Si quantum dots using polarized Raman spectroscopy
- DOI 10.1103/PhysRevB.73.075322, 075322
- A. V. Baranov, A. V. Fedorov, and T. S. Perova, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.73.075322 73, 075322 (2006). (Pubitemid 43270766)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.7 , pp. 1-6
- Baranov, A.V.¹ Fedorov, A.V.² Perova, T.S.³ Moore, R.A.⁴ Yam, V.⁵ Bouchier, D.⁶ Le Thanh, V.⁷ Berwick, K.⁸

27
- 79958217788
- J. S. Reparaz, A. Bernardi, A. R. Goni, M. I. Alonso, and M. Garriga, Phys. Status Solidi B 56, 1 (2009).
- (2009) Phys. Status Solidi B , vol.56 , pp. 1
- Reparaz, J.S.¹ Bernardi, A.² Goni, A.R.³ Alonso, M.I.⁴ Garriga, M.⁵

28
- 35748930553
- Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies
- DOI 10.1088/0957-4484/18/47/475401, PII S0957448407550324
- A. Bernardi, M. I. Alonso, J. S. Reparaz, A. R. Goni, P. D. Lacharmoise, J. O. Osso, and M. Garriga, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/ 18/47/475401 18, 475401 (2007). (Pubitemid 350050153)
- (2007) Nanotechnology , vol.18 , Issue.47 , pp. 475401
- Bernardi, A.¹ Alonso, M.I.² Reparaz, J.S.³ Goni, A.R.⁴ Lacharmoise, P.D.⁵ Osso, J.O.⁶ Garriga, M.⁷

29
- 42749101206
- PLRBAQ 1098-0121 10.1103/PhysRevB.69.235327
- S. F. Ren, W. Cheng, and P. Y. Yu, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.69.235327 69, 235327 (2004).
- (2004) Phys. Rev. B , vol.69 , pp. 235327
- Ren, S.F.¹ Cheng, W.² Yu, P.Y.³

30
- 23944469380
- Strain and composition profiles of self-assembled Ge/Si (001) islands
- DOI 10.1063/1.2006229, 033530
- M. I. Alonso, M. de la Calle, and J. O. Osso, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2006229 98, 033530 (2005). (Pubitemid 41204770)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-6
- Alonso, M.I.¹ De La Calle, M.² Osso, J.O.³ Garriga, M.⁴ Goni, A.R.⁵

31
- 40049108290
- Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited
- DOI 10.1063/1.2884526
- J. S. Reparaz, A. Bernardi, and A. R. Goni, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2884526 92, 081909 (2008). (Pubitemid 351323050)
- (2008) Applied Physics Letters , vol.92 , Issue.8 , pp. 081909
- Reparaz, J.S.¹ Bernardi, A.² Goni, A.R.³ Alonso, M.I.⁴ Garriga, M.⁵

32
- 23444445155
- Raman study of self-assembled SiGe nanoislands grown at low temperatures
- DOI 10.1088/0957-4484/16/9/007, PII S0957448405943936
- M. Y. Valakh, V. Yukhimchuk, V. M. Dzhagan, O. S. Lytvyn, A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, F. Alsina, and J. Pascual, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/16/9/007 16, 1464 (2005). (Pubitemid 41107794)
- (2005) Nanotechnology , vol.16 , Issue.9 , pp. 1464-1468
- Valakh, M.Ya.¹ Yukhymchuk, V.O.² Dzhagan, V.M.³ Lytvyn, O.S.⁴ Milekhin, A.G.⁵ Nikiforov, A.I.⁶ Pchelyakov, O.P.⁷ Alsina, F.⁸ Pascual, J.⁹

33
- 0242440207
- PLRBAQ 1098-0121 10.1103/PhysRevB.68.125302
- P. H. Tan, K. Brunner, D. Bougeard, and G. Abstreiter, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.68.125302 68, 125302 (2003).
- (2003) Phys. Rev. B , vol.68 , pp. 125302
- Tan, P.H.¹ Brunner, K.² Bougeard, D.³ Abstreiter, G.⁴

34
- 80053607161
- Nextnano 3. "Device simulation package"
- Nextnano 3. "Device simulation package" [http://www.nextnano. de/.] (09 June 2011).

35
- 34248678421
- Photoconductivity spectra of Ge/Si heterostructures with Ge QDs
- DOI 10.1088/0957-4484/18/18/185401, PII S0957448407359333
- S. V. Kondratenko, O. V. Vakulenko, Yu. N. Kozyrev, M. Y. Rubezhanska, A. S. Nikolenko, and S. L. Golovinskiy, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/18/18/185401 18, 185401 (2007). (Pubitemid 46774775)
- (2007) Nanotechnology , vol.18 , Issue.18 , pp. 185401
- Vakulenko, O.V.¹ Kondratenko, S.V.² Nikolenko, A.S.³ Golovinskiy, S.L.⁴ Kozyrev, Yu.N.⁵ Rubezhanska, M.Yu.⁶ Vodyanitsky, A.I.⁷

36
- 79955986137
- Normal-incidence Ge quantum-dot photodetectors at 1.5 m based on Si substrate
- DOI 10.1063/1.1449525
- S. Tsong, J. L. Liu, J. Wan, and L. Kang, Appl. Phys. Lett. 10.1063/1.1449525 80, 1189 (2002). (Pubitemid 34180521)
- (2002) Applied Physics Letters , vol.80 , Issue.7 , pp. 1189
- Tong, S.¹ Liu, J.L.² Wan, J.³ Wang, K.L.⁴

37
- 0000831471
- APPLAB 0003-6951 10.1063/1.125927
- C. Meisner, O. Röthig, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125927 76, 1027 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1027
- Meisner, C.¹ Röthig, O.² Brunner, K.³ Abstreiter, G.⁴

38
- 65549147382
- NNOTER 0957-4484 10.1088/0957-4484/20/17/175401
- A. B. Talochkin, I. B. Chistokhin, and V. A. Markov, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/20/17/175401 20, 175401 (2009).
- (2009) Nanotechnology , vol.20 , pp. 175401
- Talochkin, A.B.¹ Chistokhin, I.B.² Markov, V.A.³

39
- 0003675250
- John Wiley & Sons, New York, 1985
- S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd edition (John Wiley & Sons, New York, 1985, 2002).
- (2002) Semiconductor Devices: Physics and Technology
- Sze, S.M.¹

40
- 33846070188
- 2-Si structures with different gate materials
- DOI 10.1016/j.mssp.2006.10.014, PII S136980010600237X, E-MRS 2006 Spring Meeting - Symposium L: Characterization of high-k dielectric materials
- Y. Gomeniuk, A. Nazarov, A. Vovk, Y. Lu, O. Buiu, S. Hall, J. K. Efavi, and M. C. Lemme, Mater. Sci. Semicond. Process. 1369-8001 10.1016/j.mssp.2006. 10.014 9, 980 (2006). (Pubitemid 46073852)
- (2006) Materials Science in Semiconductor Processing , vol.9 , Issue.6 , pp. 980-984
- Gomeniuk, Y.¹ Nazarov, A.² Vovk, Ya.³ Lu, Y.⁴ Buiu, O.⁵ Hall, S.⁶ Efavi, J.K.⁷ Lemme, M.C.⁸

41
- 67649086090
- APPLAB 0003-6951 10.1063/1.3154524
- L. Li, S. Ketharanathan, J. Drucker, and M. R. McCartney, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3154524 94, 232108 (2009).
- (2009) Appl. Phys. Lett. , vol.94 , pp. 232108
- Li, L.¹ Ketharanathan, S.² Drucker, J.³ McCartney, M.R.⁴

42
- 0038711282
- 0921-4526 10.1016/S0921-4526(03)00313-2
- K. Wang, H. Chen, and W. Z. Shen, Phys. B 0921-4526 10.1016/S0921- 4526(03)00313-2 336, 369 (2003).
- (2003) Phys. B , vol.336 , pp. 369
- Wang, K.¹ Chen, H.² Shen, W.Z.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.