Low-temperature conductance measurements of surface states in HfO2-Si structures with different gate materials

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 980-984

  Gomeniuk, Y ^a   Nazarov, A ^a   Vovk, Ya ^a   Lu, Yi ^b   Buiu, O ^b   Hall, S ^b   Efavi, J K ^c   Lemme, M C ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c AMO GMBH   (Germany)

Author keywords

G measurements; Gate stack; High k dielectrics; Interface state density

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC INSULATORS; ELECTRODES; ELECTRON TRAPS; INTERFACES (MATERIALS); MOS DEVICES;

GATE ELECTRODE MATERIALS; GATE STACKS; HIGH-K DIELECTRICS; INTERFACE STATE DENSITY;

CAPACITORS;

EID: 33846070188     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.014     Document Type: Article

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