AC electrical properties of nanocrystalline silicon thin films

Physica B: Condensed Matter

Volumn 336, Issue 3-4, 2003, Pages 369-378

  Wang, K ^a   Chen, H ^a   Shen, W Z ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

AC conductance; Capacitance; Nc Si:H

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FILM GROWTH; HYDROGENATION; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON;

HETEROQUANTUM DOT (HQD) TUNNELING;

THIN FILMS;

EID: 0038711282     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00313-2     Document Type: Article

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