Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe

Journal of Applied Physics

Volumn 81, Issue 5, 1997, Pages 2425-2428

  Lu, Fang ^a,b   Wang, Shouqi ^a   Jung, Hyundon ^a   Zhu, Ziqiang ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC SPACE CHARGE; ELECTRONS; ENERGY GAP; FERMI LEVEL; NITROGEN; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

ELECTRON TRAPS; PHOTOINDUCED ADMITTANCE SPECTROSCOPY; SCHOTTKY BARRIERS; SHALLOW LEVELS; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031101108     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364249     Document Type: Article

References (12)

1. J. Nishizawa, K. Itoh, Y. Okuno, and F. Sakura, J. Appl. Phys. 57, 2210 (1985).
2. Z. Zhu, K. Takebayashi, K. Tanaka, T. Ebisutani, J. Kawamata, and T. Yao, Appl. Phys. Lett. 64, 91 (1994).
3. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
4. W. B. Leigh and B. W. Wessels, J. Appl. Phys. 55, 1614 (1984).
5. K. Tanaka, Z. Zhu, and T. Yao, Appl. Phys. Lett. 66, 3349 (1995).
6. D. L. Losee, J. Appl. Phys. 46. 2204 (1975).
7. G. Vincent, D. Bois, and P. Pinard, J. Appl. Phys. 46, 5173 (1975).
8. D. L. Polla and C. E. Jones, J. Appl. Phys. 51, 6233 (1980).
9. Z. Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, and B. C. Cavenett, J. Cryst. Growth 159, 248 (1996).
10. D. Albert, J. Kraus, E. Kurtz, S. Einfeldt, and D. Hommel, J. Cryst. Growth 159, 276 (1996).
11. I. S. Hauksson, J. Simpson, S. Y. Wang, K. A. Prior, and B. C. Cavenett, Appl. Phys. Lett. 61, 2208 (1992).
12. Z. Zhu, G. D. Brownlie, P. J. Thompson, K. A. Prior, and B. C. Cavenett, Appl. Phys. Lett. 67, 3762 (1995).