Low-temperature self-curable polyacrylate copolymer gate insulator for hysteresis-free organic field-effect transistors

Organic Electronics

Volumn 12, Issue 12, 2011, Pages 2040-2046

  Xu, Wentao ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Hysteresis; Low temperature curing; Organic field effect transistor; Polymer gate insulator; Self curable

Indexed keywords

CURING; DIELECTRIC FILMS; DIFFERENTIAL SCANNING CALORIMETRY; FLEXIBLE ELECTRONICS; GRAVIMETRIC ANALYSIS; HYSTERESIS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; POWER TRANSISTORS; SUBSTRATES; TEMPERATURE; THERMOGRAVIMETRIC ANALYSIS;

DSC(DIFFERENTIAL SCANNING CALORIMETRY); FIELD-EFFECT MOBILITIES; INVERSE SUBTHRESHOLD SLOPES; LOW-TEMPERATURE CURING; METAL INSULATOR SEMICONDUCTOR CAPACITORS; ON/OFF CURRENT RATIO; POLYMER GATE INSULATOR; SELF-CURABLE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80053376561     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.08.029     Document Type: Article

References (49)

1. Y.-G. Ha, S. Jeong, J. Wu, M.-G. Kim, V.P. Dravid, A. Facchetti, and T.J. Marks J. Am. Chem. Soc. 132 2010 17426
2. M.E. Roberts, S.C.B. Mannsfeld, N. Queraltó, C. Reese, J. Locklin, W. Knoll, and Z. Bao Proc. Natl. Acad. Sci. USA 105 2008 12134
3. L. Wang, D. Fine, D. Sharma, L. Torsi, and A. Dodabalapur Anal. Bioanal. Chem. 384 2006 310
4. L. Miozzo, A. Yassar, and G. Horowitz J. Mater. Chem. 20 2010 2513
5. C. Di, G. Yu, Y. Liu, and D. Zhu J. Phys. Chem. B 111 2007 14083
6. T.W. Kelley, L.D. Boardman, T.D. Dunbar, D.V. Muyres, M.J. Pellerite, and T.P. Smith J. Phys. Chem. B 107 2003 5877
7. H. Yang, T.J. Shin, M.M. Ling, K. Cho, C.Y. Ryu, and Z. Bao J. Am. Chem. Soc. 127 2005 11542
8. M.M. Payne, S.R. Parkin, J.E. Anthony, C.-C. Kuo, and T.N. Jackson J. Am. Chem. Soc. 127 2005 4986
9. H. Ebata, T. Izawa, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, and T. Yui J. Am. Chem. Soc. 129 2007 15732
10. T. Nagase, T. Hamada, K. Tomatsu, S. Yamazaki, T. Kobayashi, S. Murakami, K. Matsukawa, and H. Naito Adv. Mater. 22 2010 4706
11. C.D. Dimitrakopoulos, and P.R.L. Malenfant Adv. Mater. 14 2002 99
12. J. Veres, S. Ogier, G. Lloyd, and D.D. Leeuw Chem. Mater. 16 2004 4543
13. H. Sirringhaus, T. Kawase, R.H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E.P. Woo Science 290 2000 2123
14. Y. Wu, Y. Li, B.S. Ong, P. Liu, S. Gardner, and B. Chiang Adv. Mater. 17 2005 184
15. S.P. Li, D.P. Chu, S.J. Newsome, D.M. Russell, T. Kugler, M. Ishida, and T. Shimoda Appl. Phys. Lett. 87 2005 232111
16. Y. Liu, K. Varahramyan, and T. Cui Macromol. Rapid Commun. 26 2005 1955
17. T.-W. Lee, Y. Byun, B.-W. Koo, I.-N. Kang, Y.-Y. Lyu, C.H. Lee, L. Pu, and S.Y. Lee Adv. Mater. 17 2005 2180
18. M. Matters, D.M. de Leeuw, M.J.C.M. Vissenberg, C.M. Hart, P.T. Herwig, T. Geuns, C.M.J. Mutsaers, and C.J. Drury Opt. Mater. 12 1999 189
19. S. Scheinert, G. Paasch, M. Schrodner, H.-K. Roth, and S. Sensfub J. Appl. Phys. 92 2002 330
20. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm Appl. Phys. Lett. 82 2003 4175
21. G. Horowitz, F. Deloffre, F. Garmier, R. Hajlaoui, M. Hmyene, and A. Yassar Synthetic Met. 54 1993 435
22. R. Schroeder, L.A. Majewski, and M. Grell Appl. Phys. Lett. 84 2004 1004
23. C.D. Sheraw, D.J. Gundlach, and T.N. Jackson Mater. Res. Soc. Symp. Proc. 558 2000 403
24. Y. Kato, S. Iba, R. Teramoto, T. Sekitani, T. Someya, H. Kawaguchi, and T. Sakurai Appl. Phys. Lett. 84 2004 3789
25. L.-L. Chua, P.K.H. Ho, H. Sirringhaus, and R.H. Friend Appl. Phys. Lett. 84 2004 3400
26. A. Facchetti, M.-H. Yoon, and T.J. Marks Adv. Mater. 17 2005 1705
27. D.K. Hwang, M.S. Oh, J.M. Hwang, J.H. Kim, and S. Im Appl. Phys. Lett. 92 2008 013304
28. S.C. Lim, S.H. Kim, J.B. Koo, J.H. Lee, C.H. Ku, Y.S. Yang, and T. Zyung Appl. Phys. Lett. 90 2007 173512
29. D.K. Hwang, K. Lee, J.H. Kim, S. Im, J.H. Park, and E. Kim Appl. Phys. Lett. 89 2006 093507
30. J. Jang, S.H. Kim, S. Nam, D.S. Chung, C. Yang, W.M. Yun, C.E. Park, and J.B. Koo Appl. Phys. Lett. 92 2008 143306
31. S.H. Kim, S.Y. Yang, K. Shin, H. Jeon, J.W. Lee, K.P. Hong, and C.E. Park Appl. Phys. Lett. 89 2006 183516
32. V.A. Zakrevskii, N.T. Sudar, A. Zaopo, and Y.A. Dubitsky J. Appl. Phys. 93 2003 2135
33. C.A. Lee, D.-W. Park, K.-D. Jung, B.-J. Kim, Y.C. Kim, J.D. Lee, and B.G. Park Appl. Phys. Lett. 89 2006 262120
34. S.Y. Yang, S.H. Kim, K. Shin, H. Jeon, and C.E. Park Appl. Phys. Lett. 88 2006 173507
35. W. Xu, and S.-W. Rhee Org. Electron. 11 2010 836
36. C. Kim, Z. Wang, H.-J. Choi, Y.-G. Ha, A. Facchetti, and T.J. Marks J. Am. Chem. Soc. 130 2008 6867
37. K. Shin, S.Y. Yang, C. Yang, H. Jeon, and C.E. Park Org. Electron. 8 2007 336
38. A. Bolognesi, M. Berliocchi, M. Manenti, A.D. Carlo, P. Lugli, K. Lmimouni, and C. Dufour IEEE Trans. Electron Devices 51 2004 1997
39. M. Taniguchi, and T. Kawai Appl. Phys. Lett. 85 2004 3298
40. F.M. Fowkes Treatise on Adhesion and Adhesives 1967 Edited by R.L. Patrick Marcel Dekker, New York pp. 352-353
41. L. Lan, J. Peng, M. Sun, J. Zhou, J. Zou, J. Wang, and Y. Cao Org. Electron. 10 2009 346
42. K.P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D.J. Gundlach, B. Batlogg, A.N. Rashid, and G. Schitterb J. Appl. Phys. 96 2004 6431
43. Dhananjay, S.B. Krupanidhi, J. Appl. Phys. 101 (2007) 123717.
44. W. Xu, and S.-W. Rhee J. Mater. Chem. 19 2009 5250
45. W. Xu, and S.-W. Rhee Org. Electron. 11 2010 996
46. W. Xu, and S.-W. Rhee J. Mater. Chem. 21 2011 998
47. I. Yagi, N. Hirai, M. Noda, A. Imaoka, Y. Miyamoto, N. Yoneya, K. Nomoto, J. Kasahara, A. Yumoto, and T. Urabe SID Symp. Digest 38 2007 1753
48. M. Mizukami, N. Hirohata, T. Iseki, K. Ohtawara, T. Tada, S. Yagyu, T. Abe, T. Suzuki, Y. Fujisaki, Y. Inoue, S. Tokito, T. Kurita, and I.E. EE Electron Device Lett. 27 2006 249
49. A. Rolland, J. Richard, J.-P. Kleider, and D. Mencaraglia J. Electrochem. Soc. 140 1993 3679