Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors

Advanced Materials

Volumn 22, Issue 42, 2010, Pages 4706-4710

  Nagase, Takashi ^a   Hamada, Takashi ^a,c   Tomatsu, Kenji ^a   Yamazaki, Saori ^a   Kobayashi, Takashi ^a   Murakami, Shuichi ^b   Matsukawa, Kimihiro ^b   Naito, Hiroyoshi ^a  

^a Osaka Prefecture University   (Japan)

^b OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Organic Field Effect Transistors; Organic Inorganic Hybrid Dielectrics; Poly(methyl silsesquioxane); Polymer Transistors; Printable Gate Dielectrics

Indexed keywords

LOW CONCENTRATIONS; LOW CURING TEMPERATURE; LOW TEMPERATURES; MOBILITY ENHANCEMENT; ORGANIC-INORGANIC HYBRID; POLY(METHYL SILSESQUIOXANE); POLYMER TRANSISTORS; PRINTABLE GATE DIELECTRICS; PROCESSABLE; SILANOL GROUPS; SOL-GEL METHODS; STABLE OPERATION;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); SILICON COMPOUNDS; SOL-GEL PROCESS;

ORGANIC FIELD EFFECT TRANSISTORS;

INORGANIC COMPOUND; ORGANOSILICON DERIVATIVE; POLYMER; POLYMETHYLSILSESQUIOXANE;

ARTICLE; CHEMISTRY; IMPEDANCE; SEMICONDUCTOR; SOLUTION AND SOLUBILITY; TEMPERATURE;

ELECTRIC IMPEDANCE; INORGANIC CHEMICALS; ORGANOSILICON COMPOUNDS; POLYMERS; SOLUTIONS; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 78149450629     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201001871     Document Type: Article

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