Effects of polar functional groups and roughness topography of polymer gate dielectric layers on pentacene field-effect transistors

Organic Electronics

Volumn 8, Issue 4, 2007, Pages 336-342

  Shin, Kwonwoo ^a   Yang, Sang Yoon ^a   Yang, Chanwoo ^a   Jeon, Hayoung ^a   Park, Chan Eon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Mobility; Oxygen plasma; Pentacene; Polar groups; Roughness of gate dielectric; Trap

Indexed keywords

AGING OF MATERIALS; DEPOSITION; ELECTRIC DIPOLE MOMENTS; ENERGY GAP; FIELD EFFECT TRANSISTORS; FUNCTIONAL GROUPS; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE ROUGHNESS; TOPOGRAPHY;

OXYGEN PLASMAS; PENTACENE; POLAR GROUPS; ROUGH TOPOGRAPHY; ROUGHNESS OF GATE DIELECTRICS;

GATE DIELECTRICS;

EID: 34248538000     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2006.12.007     Document Type: Article

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