Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 1997-2003

  Bolognesi, Alessandro ^a   Berliocchi, Marco ^a   Manenti, Maurizio ^a   Di Carlo, Aldo ^a   Lugli, Paolo ^b   Lmimouni, Kamal ^c   Dufour, Claude ^c  

^a INFM   (Italy)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c UNIV LILLE   (France)

Author keywords

Grain boundaries; Mobility; Pentacene; Trapping

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

FIELD DEPENDENT MOBILITY; INTERFACE TRAP STATES; ORGANIC THIN FILM TRANSISTORS; PENTACENE;

THIN FILM TRANSISTORS;

EID: 10644240904     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838333     Document Type: Article

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