SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Kim, Eunkyeom ^a   Kim, Youngill ^a   Han Kim, Do ^b   Lee, Kyoungmi ^b   Parsons, Gregory N ^b   Park, Kyoungwan ^a  

^a University of Seoul   (South Korea)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; ANNEALING PROCESS; CHARGE TRAP; CRYSTALLINITIES; FIELD-EFFECT MOBILITIES; MEMORY WINDOW; NON-VOLATILE; NON-VOLATILE MEMORIES; ON/OFF RATIO; RETENTION TIME; STRESS VOLTAGES; SUBTHRESHOLD SLOPE; THRESHOLD-VOLTAGE SHIFT; TIME DURATION; TRANSISTOR OPERATION; X-RAY PHOTOEMISSIONS; ZNO; ZNO FILMS; ZNO THIN FILM;

DEPOSITION; METALLIC FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; STOICHIOMETRY; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; VAPOR DEPOSITION; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 80053218592     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3640221     Document Type: Article

References (25)

1. J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, Appl. Phys. Lett. 88, 212903 (2006). 10.1063/1.2204574
2. C. Li, Y. Li, Y. Wu, B. S. Ong, and R. O. Loutfy, J. Appl. Phys. 102, 076101 (2007). 10.1063/1.2773683
3. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003). 10.1063/1.1542677
4. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, Appl. Phys. Lett. 85, 2541 (2004). 10.1063/1.1790587
5. S. Chang, Y.-W. Song, S. Lee, S. Y. Lee, and B.-K. Ju, Appl. Phys. Lett. 92, 192104 (2008). 10.1063/1.2924769
6. A. Lu, J. Sun, J. Jiang, and Q. Wan, Appl. Phys. Lett. 96, 043114 (2010). 10.1063/1.3294325
7. S. J. Lim, S.-j Kwon, H. Kim, and J.-S. Park, Appl. Phys. Lett. 91, 183517 (2007). 10.1063/1.2803219
8. S.-H. K. Park, C.-S. Hwang, H. Y. Jeong, H. Y. Chu, and K. I. Cho, Electrochem. Solid-State Lett. 11, H10 (2008). 10.1149/1.2801017
9. H.-H. Hsieh and C.-C. Wu, Appl. Phys. Lett. 89, 041109 (2006). 10.1063/1.2235895
10. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090
11. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 92, 023502 (2008). 10.1063/1.2830940
12. S. Kwon, S. Bang, S. Lee, W. Jeong, H. Kim, S. C. Gong, H. J. Chang, H.-h. Park, and H. Jeon, Semicond. Sci. Technol. 24, 035015 (2009). 10.1088/0268-1242/24/3/035015
13. D. Kim, H. Kang, J.-M. Kim, and H. Kim, Appl. Surf. Sci. 257, 3776 (2011). 10.1016/j.apsusc.2010.11.138
14. G. Neumann, Curr. Top. Mater. Sci. 7, 143 (1981).
15. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000). 10.1103/PhysRevLett.85.1012
16. S.-H. K. Park, C.-S. Hwang, H.-S. Kwack, J.-H. Lee, and H. Y. Chu, Electrochem. Soild-State Lett. 9, G299 (2006). 10.1149/1.2221770
17. D. Gupta, M. Anand, S.-W. Ryu, Y.-K. Choi, and S. Yoo, Appl. Phys. Lett. 93, 224106 (2008). 10.1063/1.3041777
18. H. Yin, S. Kim, C. J. Kim, I. Song, J. Park, S. Kim, and Y. Park, Appl. Phys. Lett. 93, 172109 (2008). 10.1063/1.3012386
19. M. K. Kim, S. D. Chae, H. S. Chae, J. H. Kim, Y. S. Jeong, J. Lee, H. Silva, S. Tiwari, and C. W. Kim, IEEE Trans. Nanotechnol. 3, 417 (2004). 10.1109/TNANO.2004.834161
20. M. H. White, Y. Yang, A. Purwar, and M. L. French, IEEE Trans. Compon., Packag., Manuf. Technol., A 20, 190 (1997). 10.1109/95.588573
21. M. K. Cho and D. M. Kim, IEEE Electron Device Lett. 21, 399 (2000). 10.1109/55.887481
22. E. Kim, T. Yim, S. An, W.-J. Cho, and K. Park, Appl. Phys. Lett. 97, 222107 (2010). 10.1063/1.3521260
23. J.-S. Na, G. Scarel, and G. N. Parsons, J. Phys. Chem. C 114, 383 (2010). 10.1021/jp908332q
24. M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, Thin Solid Films 280, 20 (1996). 10.1016/0040-6090(95)08239-5
25. M. Chen, X. Wang, Y. H. Yu, Z. L. Pei, X. D. Bai, C. Sun, R. F. Huang, and L. S. Wen, Appl. Surf. Sci. 158, 134 (2000). 10.1016/S0169-4332(99)00601-7