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Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics

(4) Lu, Aixia a,b Sun, Jia a Jiang, Jie a Wan, Qing a,b

a HUNAN UNIVERSITY (China)

b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; CHANNEL LAYERS; DOUBLE LAYERS; EDL EFFECTS; ELECTRIC DOUBLE LAYER; GATE VOLTAGE SWING; HIGH FIELD; LOW-VOLTAGE; MACROELECTRONICS; MESOPOROUS; ON/OFF RATIO; ROOM TEMPERATURE; SPECIFIC CAPACITANCE; SUBTHRESHOLD; TEMPERATURE-SENSITIVE; TRANSISTOR CHARACTERISTICS; TRANSPARENT ELECTRONICS; ZNO;

DIELECTRIC MATERIALS; ENGINEERING EXHIBITIONS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 75749099899 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3294325 Document Type: Article

Times cited : (61)

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