Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Alian, Alireza ^a,b   Brammertz, Guy ^a   Merckling, Clement ^a   Firrincieli, Andrea ^a,b   Wang, Wei E ^a   Lin, H C ^a   Caymax, Matty ^a   Meuris, Marc ^a   De Meyer, Kristin ^a,b   Heyns, Marc ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM SULFIDE; BORDER TRAPS; DRIVE CURRENTS; GATE OXIDE DEPOSITION; INP; METAL OXIDE SEMICONDUCTOR; MOS-FET; MOSFETS; NATIVE OXIDES; OXIDE/SEMICONDUCTOR INTERFACES; PERFORMANCE DEGRADATION; PERFORMANCE IMPROVEMENTS; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

DEFECT DENSITY; INDIUM; MOS DEVICES; MOSFET DEVICES; PASSIVATION; PHOTODEGRADATION; SURFACE TREATMENT; TRANSISTORS; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIUM COMPOUNDS;

EID: 80053178762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638492     Document Type: Article

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