Passivation of InP-based HBTs

Applied Surface Science

Volumn 252, Issue 21, 2006, Pages 7664-7670

  Jin, Z ^a   Uchida, K ^a   Nozaki, S ^a   Prost, W ^b   Tegude, F J ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Heterostructure bipolar transistor; InP; Passivation; Silicon nitride; Sulfur

Indexed keywords

DEGRADATION; DEPOSITION; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE; SULFUR;

BASE CURRENTS; CURRENT GAIN; HETEROSTRUCTURE BIPOLAR TRANSISTORS (HBT); SURFACE EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33747412619     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.050     Document Type: Article

References (20)

1. Sandroff C.J., Nottenburg R.N., Bischoff J.C., and Bhat R. Appl. Phys. Lett. 51 (1987) 33
2. Driad R., Lu Z.H., Charbonneau S., McKinnon W.R., Laframboise S., Poole P.J., and McAlister S.P. Appl. Phys. Lett. 73 (1998) 665
3. Jin Z., Neumann S., Prost W., and Tegude F.J. Phys. Stat. Sol (A) 201 (2004) 1017
4. Jin Z., Neumann S., Prost W., and Tegude F.-J. IEEE Electron. Dev. 51 (2004) 1044
5. Kikawa T., Takatani S., Masuda H., and Tanoue T. Jpn. J. Appl. Phys. 38 (1999) 1195
6. Caffin D., Bricard L., Courant J.L., Chun L.S.H.K., Lescaut B., Duchenois A.M., Megheli M., Benchimol J.L., and Launay P. IPRM97 (1997) 637
7. Jin Z., Otten F., Reimann T., Neumann S., Prost W., and Tegude F.J. Solid-State Electron. 48 (2004) 1637 (and references therein)
8. Jin Z., Prost W., Neumann S., and Tegude F.J. J. Appl. Phys. 96 (2004) 777
9. Liu W., and Harris J. IEEE Electron. Dev. 39 (1992) 2726
10. Shikata S., and Hayashi H. J. Appl. Phys. 70 (1991) 3721
11. Mohideen U., Hobson W.S., Perton S.J., Ren F., and Slusher R.E. Appl. Phys. Lett. 64 (1994) 1911
12. Jin Z., Prost W., Neumann S., and Tegude F.J. J. Vac. Sci. Technol. B 22 (2004) 1060
13. Neumann S., Prost W., and Tegude F.J. IPRM03 (2003) 575
14. Wiersch A., Heedt C., Schneiders S., Tilders R., Buchali F., Kuebart W., Prost W., and Tegude F.J. J. Non-Cryst. Sol. 187 (1995) 334
15. Searles S., and Pulfrey D.L. IEEE Electron. Dev. 41 (1994) 476
16. Jin Z., Neumann S., Prost W., and Tegude F.J. Appl. Phys. Lett. 84 (2004) 2910
17. Tiwari S., and Frank D.J. IEEE Electron. Dev. 36 (1989) 2105
18. Lu Z.H., Graham M.J., Feng X.H., and Yang B.X. Appl. Phys. Lett. 62 (1993) 2932
19. Jin Z., Hashizume T., and Hasegawa H. Jpn. J. Appl. Phys. 40 (2001) 2757
20. Xing H., Jena D., Rodwell M.J.W., and Mishra U.K. IEEE Elecron. Dev. Lett. 24 (2003) 4