Molecular beam epitaxy of GaSb layers on GaAs (0 0 1) substrates by using three-step ZnTe buffer layers

Journal of Crystal Growth

Volumn 305, Issue 1, 2007, Pages 40-44

  Lee, Woong ^a   Kim, Siyoung ^a   Choi, Sunggook ^a   Lee, Hongchan ^a   Lee, Sangtae ^a   Park, Seunghwan ^b   Yao, Takafumi ^b   Song, Joonsuk ^c   Ko, Hangju ^d   Chang, Jiho ^a  

^a KMU   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

^c NeosemiTech Corporation   (South Korea)

^d Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

A1. X ray diffraction; A2. Single crystal growth; A3. Molecular beam epitaxy; B1. Antimonides; B1. ZnTe; B2. Semiconductiong III V

Indexed keywords

ANNEALING; BUFFER LAYERS; DEFORMATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; TWO DIMENSIONAL;

CRYSTALLINITY; RECIPROCAL SPACE MAPPING (RSM); STRUCTURAL DEFORMATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34249946626     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.015     Document Type: Article

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