Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate

Journal of Crystal Growth

Volumn 242, Issue 1-2, 2002, Pages 95-103

  Song, J S ^a   Chang, J H ^a   Hong, S K ^a   Cho, M W ^b   Makino, H ^a   Hanada, T ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LG Electronics Inc   (South Korea)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

CRYSTALLINE MATERIALS; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STACKING FAULTS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY;

MOLECULAR BEAM EPITAXY;

EID: 0036643593     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01355-6     Document Type: Article

References (14)