Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 200-202

  Zolper, J C ^a   Hagerott Crawford, M ^a   Howard, A J ^a   Ramer, J ^b   Hersee, S D ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHEMICAL ANALYSIS; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; HIGH TEMPERATURE OPERATIONS; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SURFACES;

BAND EDGE LUMINESCENCE INTENSITY; DEEP LEVEL LUMINESCENCE; ELECTRON MOBILITY; PHOTOLUMINESCENCE INTENSITY; SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030574520     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116459     Document Type: Article

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