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Volumn 77, Issue 4, 2000, Pages 537-539

Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy

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EID: 0001315367     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127036     Document Type: Article
Times cited : (140)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.