Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface

Nanotechnology

Volumn 22, Issue 40, 2011, Pages

  Zafar, Sufi ^a   D'Emic, Christopher ^a   Afzali, Ali ^a   Fletcher, Benjamin ^a   Zhu, Y ^a   Ning, Tak ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CONCENTRATIONS; CURRENT CHANGE; DIELECTRIC SENSING; FABRICATION PROCESS; KEY CHARACTERISTICS; MAXIMUM SENSITIVITY; PH SENSING; PH SENSITIVITY; SENSING SURFACE; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON PROCESSING; SUBTHRESHOLD; TOP DOWN APPROACHES;

DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; NANOWIRES; OPTIMIZATION; PH SENSORS; SENSORS; SILICON COMPOUNDS; SILICON OXIDES;

PH EFFECTS;

EID: 80052932938     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/40/405501     Document Type: Article

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