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Volumn 7972, Issue , 2011, Pages

Systematic studies on reactive ion etch-induced deformations of organic underlayers

Author keywords

Pattern transfer; Planarizing layer; Plasma etch; Spin on carbon; Trilayer; Underlayer; Wiggling

Indexed keywords

PATTERN TRANSFERS; PLANARIZING LAYER; PLASMA ETCH; SPIN ON CARBON; TRILAYERS; UNDERLAYERS; WIGGLING;

EID: 79955881911     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879442     Document Type: Conference Paper
Times cited : (30)

References (13)
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    • Lassig, S. and Hudson, E., "Etching with 193 nm resists", Solid State Technology 45(10), 48-54 (2002).
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    • Lassig, S.1    Hudson, E.2
  • 4
    • 18144369241 scopus 로고    scopus 로고
    • Photoresists meet the 193 nm milestone
    • Peters, L., "Photoresists Meet the 193 nm Milestone", Semiconductor International 28(2), 38-64 (2005).
    • (2005) Semiconductor International , vol.28 , Issue.2 , pp. 38-64
    • Peters, L.1
  • 8
    • 0346651219 scopus 로고
    • Charging of pattern features during plasma etching
    • Arnold, J.C. and Sawin, H.H., "Charging of pattern features during plasma etching", J. Appl. Phys. 70, 5314-5317 (1991).
    • (1991) J. Appl. Phys. , vol.70 , pp. 5314-5317
    • Arnold, J.C.1    Sawin, H.H.2
  • 10
    • 33947174133 scopus 로고    scopus 로고
    • 2 addition to fluorocarbon plasma in via-hole etching
    • DOI 10.1016/j.tsf.2006.10.037, PII S0040609006012272
    • Yonekura, K., Yoshikawa, K., Fujiwara, Y., Sakamori, S., Fujiwara, N., Kosaka, T., Ohkuni, M. and Tateiwa, K., "Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching", Thin Solid Films 515, 5012-5018 (2007). (Pubitemid 46399861)
    • (2007) Thin Solid Films , vol.515 , Issue.12 , pp. 5012-5018
    • Yonekura, K.1    Yoshikawa, K.2    Fujiwara, Y.3    Sakamori, S.4    Fujiwara, N.5    Kosaka, T.6    Ohkuni, M.7    Tateiwa, K.8
  • 12
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    • Evaluating resist degradation during reactive ion oxide etching using 193nm model resist formulations
    • May, M.J., Mortini, B., Sourd, C., Perret, D., Chung, D.W., Barclay, G., Brochon, C. and Hadziioannou, G., "Evaluating resist degradation during reactive ion oxide etching using 193nm model resist formulations", Proc. SPIE 6153, 61530P-1 - 61530P-8 (2006).
    • (2006) Proc. SPIE , vol.6153
    • May, M.J.1    Mortini, B.2    Sourd, C.3    Perret, D.4    Chung, D.W.5    Barclay, G.6    Brochon, C.7    Hadziioannou, G.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.