-
1
-
-
79955894785
-
Etching with 193 nm resists
-
Lassig, S. and Hudson, E., "Etching with 193 nm resists", Solid State Technology 45(10), 48-54 (2002).
-
(2002)
Solid State Technology
, vol.45
, Issue.10
, pp. 48-54
-
-
Lassig, S.1
Hudson, E.2
-
2
-
-
31844441446
-
Control of line edge roughness for etching with 193nm photoresist
-
Hudson, E.A., Dai, Z., Li, Z., Kang, S., Lee, S., Chen, W. and Sadjadi, R., "Control of Line Edge Roughness for Etching with 193nm Photoresist", Proc. Dry Process Int. Symp. 253-258 (2003).
-
(2003)
Proc. Dry Process Int. Symp.
, pp. 253-258
-
-
Hudson, E.A.1
Dai, Z.2
Li, Z.3
Kang, S.4
Lee, S.5
Chen, W.6
Sadjadi, R.7
-
3
-
-
33745591952
-
Silicon containing polymer in applications for 193 nm high NA lithography processes
-
Burns, S., Pfeiffer, D., Mahorowala, A., Petrillo, K., Clancy, A., Babich, K., Medeiros, D., Allen, S., Holmes, S., Crouse, M., Brodsky, C., Pham, V., Lin, Y., Patel, K., Lustig, N., Gabor, A., Sheraw, C., Brock, P. and Larson, C., "Silicon containing polymer in applications for 193 nm high NA lithography processes", Proc. SPIE 6153, 61530K-1 - 61530K-12 (2006).
-
(2006)
Proc. SPIE
, vol.6153
-
-
Burns, S.1
Pfeiffer, D.2
Mahorowala, A.3
Petrillo, K.4
Clancy, A.5
Babich, K.6
Medeiros, D.7
Allen, S.8
Holmes, S.9
Crouse, M.10
Brodsky, C.11
Pham, V.12
Lin, Y.13
Patel, K.14
Lustig, N.15
Gabor, A.16
Sheraw, C.17
Brock, P.18
Larson, C.19
-
4
-
-
18144369241
-
Photoresists meet the 193 nm milestone
-
Peters, L., "Photoresists Meet the 193 nm Milestone", Semiconductor International 28(2), 38-64 (2005).
-
(2005)
Semiconductor International
, vol.28
, Issue.2
, pp. 38-64
-
-
Peters, L.1
-
5
-
-
79955927626
-
Performance of trilayer process required for 22nm and beyond
-
Wei, Y., Glodde, M., Yusuff, H., Lawson, M., Chang, S. Y., Yoon, K.S., Wu, C. and Kelling, M., "Performance of trilayer process required for 22nm and beyond", this proceeding 7972 (2011).
-
(2011)
This Proceeding
, vol.7972
-
-
Wei, Y.1
Glodde, M.2
Yusuff, H.3
Lawson, M.4
Chang, S.Y.5
Yoon, K.S.6
Wu, C.7
Kelling, M.8
-
6
-
-
34547838294
-
Sub-55 nm etch process using stacked-mask process
-
DOI 10.1143/JJAP.46.4286
-
Sakai, I., Abe, J., Hayashi, H., Taniguchi, Y., Kato, H., Onishi, Y. and Ohiwa, T., "Sub-55nm Etch Process Using Stacked-Mask Process", Jpn. J. Appl. Phys. 46, 4286-4288 (2007). (Pubitemid 47245402)
-
(2007)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.46
, Issue.7 A
, pp. 4286-4288
-
-
Sakai, I.1
Abe, J.2
Hayashi, H.3
Taniguchi, Y.4
Kato, H.5
Onishi, Y.6
Ohiwa, T.7
-
7
-
-
45449107160
-
Sub-45nm resist process using stacked-mask process
-
Seino, Y., Kobayashi, K., Sho, K., Kato, H., Miyoshi, S., Kikutani, K., Abe, J., Hayashi, H., Ohiwa, T, Oonishi, Y. and Ito, S., "Sub-45nm Resist Process Using Stacked-Mask Process", Proc. SPIE 6923, 6923O-6923O-8 (2008).
-
(2008)
Proc. SPIE
, vol.6923
-
-
Seino, Y.1
Kobayashi, K.2
Sho, K.3
Kato, H.4
Miyoshi, S.5
Kikutani, K.6
Abe, J.7
Hayashi, H.8
Ohiwa, T.9
Oonishi, Y.10
Ito, S.11
-
8
-
-
0346651219
-
Charging of pattern features during plasma etching
-
Arnold, J.C. and Sawin, H.H., "Charging of pattern features during plasma etching", J. Appl. Phys. 70, 5314-5317 (1991).
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 5314-5317
-
-
Arnold, J.C.1
Sawin, H.H.2
-
9
-
-
35148821113
-
Development of high-performance multi-layer resist process with hardening treatment
-
Ono, Y., Ishibashi, T., Yamaguchi, A., Hanawa, T., Tadokoro, M., Yoshikawa, K., Yonekura, K., Matsuda, K., Matsunobe, T., Fujii, Y. and Tanaka, T., "Development of high-performance multi-layer resist process with hardening treatment", Proc. SPIE 6519, 65192O-1 - 65192O-9 (2007).
-
(2007)
Proc. SPIE
, vol.6519
-
-
Ono, Y.1
Ishibashi, T.2
Yamaguchi, A.3
Hanawa, T.4
Tadokoro, M.5
Yoshikawa, K.6
Yonekura, K.7
Matsuda, K.8
Matsunobe, T.9
Fujii, Y.10
Tanaka, T.11
-
10
-
-
33947174133
-
2 addition to fluorocarbon plasma in via-hole etching
-
DOI 10.1016/j.tsf.2006.10.037, PII S0040609006012272
-
Yonekura, K., Yoshikawa, K., Fujiwara, Y., Sakamori, S., Fujiwara, N., Kosaka, T., Ohkuni, M. and Tateiwa, K., "Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching", Thin Solid Films 515, 5012-5018 (2007). (Pubitemid 46399861)
-
(2007)
Thin Solid Films
, vol.515
, Issue.12
, pp. 5012-5018
-
-
Yonekura, K.1
Yoshikawa, K.2
Fujiwara, Y.3
Sakamori, S.4
Fujiwara, N.5
Kosaka, T.6
Ohkuni, M.7
Tateiwa, K.8
-
11
-
-
36148991900
-
Novel spin-on carbon hard mask with hardening by ion implantation
-
Ishibashi, T., Ono, Y., Yamaguchi, A., Ogawa, S., Hanawa, T., Shinohara, M., Tadokoro, M., Yonekura, K., Mitarai, Y., Matsuda, K., Hirori, H., Miyamoto, T. and Matsunobe, T., "Novel Spin-on Carbon Hard Mask with Hardening by Ion Implantation", J. Photopolym. Sci. Technol. 20, 365-372 (2007).
-
(2007)
J. Photopolym. Sci. Technol.
, vol.20
, pp. 365-372
-
-
Ishibashi, T.1
Ono, Y.2
Yamaguchi, A.3
Ogawa, S.4
Hanawa, T.5
Shinohara, M.6
Tadokoro, M.7
Yonekura, K.8
Mitarai, Y.9
Matsuda, K.10
Hirori, H.11
Miyamoto, T.12
Matsunobe, T.13
-
12
-
-
33745598870
-
Evaluating resist degradation during reactive ion oxide etching using 193nm model resist formulations
-
May, M.J., Mortini, B., Sourd, C., Perret, D., Chung, D.W., Barclay, G., Brochon, C. and Hadziioannou, G., "Evaluating resist degradation during reactive ion oxide etching using 193nm model resist formulations", Proc. SPIE 6153, 61530P-1 - 61530P-8 (2006).
-
(2006)
Proc. SPIE
, vol.6153
-
-
May, M.J.1
Mortini, B.2
Sourd, C.3
Perret, D.4
Chung, D.W.5
Barclay, G.6
Brochon, C.7
Hadziioannou, G.8
-
13
-
-
33745629852
-
Changes of chemical nature of photoresists induced by various plasma treatments and their impact on LWR
-
Kawahira, H., Matsuzawa, N.N., Matsui, E., Ando, A., Salam, K.M.A., Yoshida, M., Yamaguchi, Y., Kugimiya, K., Tatsumi, T., Nakano, H., Iwai, T. and Irie, M., "Changes of Chemical Nature of Photoresists Induced by Various Plasma Treatments and Their Impact on LWR", Proc. SPIE 6153, 615319-1 - 615319-10 (2006).
-
(2006)
Proc. SPIE
, vol.6153
, pp. 6153191-61531910
-
-
Kawahira, H.1
Matsuzawa, N.N.2
Matsui, E.3
Ando, A.4
Salam, K.M.A.5
Yoshida, M.6
Yamaguchi, Y.7
Kugimiya, K.8
Tatsumi, T.9
Nakano, H.10
Iwai, T.11
Irie, M.12
|