Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2588-2592

  Guillorn, M ^a   Chang, J ^a   Fuller, N ^a   Patel, J ^a   Darnon, M ^a   Pyzyna, A ^a   Joseph, E ^a   Engelmann, S ^a   Ott, J ^a   Newbury, J ^a   Klaus, D ^a   Bucchignano, J ^a   Joshi, P ^a   Scerbo, C ^a   Kratschmer, E ^a   Graham, W ^a   To, B ^a   Parisi, J ^a   Zhang, Y ^a   Haensch, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; ANTI REFLECTIVE COATINGS; COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES; COMPOSITE IMAGES; DEVICE FABRICATIONS; ETCH MASK; HIGH DENSITY; HYBRID LITHOGRAPHY; HYDROGEN SILSESQUIOXANE; NEGATIVE TONES; OPTICAL LITHOGRAPHY; PATTERN TRANSFERS; PROTOTYPING; STATIC RANDOM ACCESS MEMORY; UNDERLAYERS;

CAVITY RESONATORS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; INTEGRATED OPTOELECTRONICS; METALLIC COMPOUNDS; MOS DEVICES; PHOTOLITHOGRAPHY; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 72849134425     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3246357     Document Type: Conference Paper

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