Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices

Solid State Communications

Volumn 150, Issue 45-46, 2010, Pages 2231-2235

  Liu, Xinjun ^a   Biju, Kuyyadi P ^a   Bourim, El Mostafa ^a   Park, Sangsu ^a   Lee, Wootae ^a   Shin, Jungho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

A. Manganites; A. Thin film; D. Interfacial layer; D. Resistive switching

Indexed keywords

A. MANGANITES; A. THIN FILM; BOTTOM ELECTRODES; ELECTROCHEMICAL MIGRATION; FORMING PROCESS; INTERFACIAL LAYER; NANOSCALE DEVICE; ORDERS OF MAGNITUDE; OXIDATION AND REDUCTION; PROGRAMMING VOLTAGE; RESISTANCE CHANGE; RESISTIVE SWITCHING; SUBMICRON; SWITCHING BEHAVIORS; VIA-HOLE;

ELECTROCHEMICAL PROPERTIES; EPITAXIAL FILMS; MANGANESE OXIDE; OXYGEN; SWITCHING SYSTEMS;

SWITCHING;

EID: 78049444743     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.09.036     Document Type: Article

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