Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1960-1963

  Xu, T ^a   Nys, J P ^a   Grandidier, B ^a   Stivenard D ^a   Coffinier, Y ^b   Boukherroub, R ^b   Larde, R ^c   Cadel, E ^c   Pareige, P ^c  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b CNRS   (France)

^c UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; BORON; BORON COMPOUNDS; DIAGNOSTIC RADIOGRAPHY; ELECTRIC WIRE; GROWTH (MATERIALS); IMPURITIES; MEDICAL IMAGING; NANOWIRES; PULSED LASER APPLICATIONS; THREE DIMENSIONAL; TOMOGRAPHY; VACUUM; VACUUM EVAPORATION;

ATOM DISTRIBUTIONS; ATOM PROBES; ATOMIC SCALES; AU ISLANDS; CHEMICAL COMPOSITIONS; DOPANT DISTRIBUTIONS; EVAPORATION RATES; FEMTOSECOND LASERS; IMPURITY CONCENTRATIONS; MICRO PILLARS; SI NANOWIRES; SI(111);

SILICON;

EID: 57249108245     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021371     Document Type: Article

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