Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiNx Layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

  Huang, Wei ^a   Yoshimoto, Masahiro ^a   Taguchi, Kohshi ^a   Harima, Hiroshi ^a   Saraie, Junji ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Annealing; Electrical properties; In situ deposition; InN; MBE growth; SiNx

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SILICON NITRIDE; VACUUM;

IN SITU DEPOSITION; INN; MBE GROWTH; SINX;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 1842759602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L97     Document Type: Article

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