AlxGa1-xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors

Journal of Physics D: Applied Physics

Volumn 44, Issue 36, 2011, Pages

  Lin, Vivian Kaixin ^a   Dolmanan, Surani Bin ^a   Teo, Siew Lang ^a   Kim, Hui Hui ^a   Alarcon Llado, Esther ^a   Dadgar, Armin ^b   Krost, Alois ^b   Tripathy, Sudhiranjan ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE SUBSTRATE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEVICE PROCESSING; HIGH POTENTIAL; HIGH RESOLUTION X RAY DIFFRACTION; HIGH SENSITIVITY; INTERFACE PROPERTY; METAL SEMICONDUCTOR METAL; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MICRO RAMAN SPECTROSCOPY; SCHOTTKY; SI-BASED; SILICON-ON-INSULATOR SUBSTRATES; ULTRA-VIOLET; UV PHOTODETECTORS; UV SENSOR; UV SPECTRAL RANGES;

ALUMINUM; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTALS; EPITAXIAL GROWTH; GALLIUM ALLOYS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL ELECTRON GAS; X RAY DIFFRACTION;

HETEROJUNCTIONS;

EID: 80052316282     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/36/365102     Document Type: Article

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