Structural and electrical characterization of Alx Ga 1-xN/GaN interfaces for UV photodetectors

Electrochemical and Solid-State Letters

Volumn 13, Issue 9, 2010, Pages

  Lin, Vivian K X ^a   Alarcon Llado, Esther ^a   Kim, Hui Hui ^a   Arulkumaran, S ^b   Ng, G I ^b   Ramam, A ^a   Tripathy, S ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; APPLIED BIAS VOLTAGE; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; HETEROSTRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; INTERFACE PHONONS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MICRO RAMAN SPECTROSCOPY; OPTICAL OBSERVATIONS; SAPPHIRE SUBSTRATES; SCHOTTKY CONTACTS; UV PHOTODETECTORS; UV-RAMAN;

ALUMINUM; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTALS; ELECTRIC PROPERTIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HETEROJUNCTIONS;

EID: 77954754558     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3447813     Document Type: Article

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