Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions

Journal of Physics D: Applied Physics

Volumn 40, Issue 19, 2007, Pages 5840-5846

  Islam, Md Nazrul ^a   Ram, Sanjay K ^b   Kumar, Satyendra ^b  

^a Indian Space Research Organization Space Application Centre   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HETEROJUNCTIONS; LIGHT EMISSION; POROUS SILICON; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

DEPLETION REGION; POROUS SILICON HETEROJUNCTIONS; SCHOTTKY JUNCTIONS; TEMPERATURE DEPENDENCE;

NANOCRYSTALLINE MATERIALS;

EID: 34748888565     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/19/007     Document Type: Article

References (40)

1. Canham L T 1990 Appl. Phys. Lett. 57 1046
2. Cullies A G, Canham L T and Calcott P D J 1997 J. Appl. Phys. 82 909
3. Collins R T, Fauchet P M and Tischler M A 1997 Phys. Today 50 24
4. Ben-Chorin M, Moller F and Koch F 1995 J. Appl. Phys. 77 4482
5. Pulsford N J, Rikken G L J A, Kessener Y A R R, Lous E J and Venhuizen A H J 1994 J. Appl. Phys. 75 636
6. Peng C, Hirschman K D and Fauchet P M 1996 J. Appl. Phys. 80 295
7. Ray A K, Mabrook M F, Nabok A V and Brown S 1998 J. Appl. Phys. 84 3232
8. Narasimhan K L 1998 Phil. Mag. B 77 75
9. Balagurov L A, Bayliss S C, Orlov A F, Petrova E A, Unal B and Yarkin D G 2001 J. Appl. Phys. 90 4184
10. Zimin S P 2000 Semiconductors 34 353
11. Tuzun O, Oktik S, Altindal S and Mammadov T S 2006 Thin Solid Films 511-512 258
12. Cheraga H, Belhousse S and Gabouze N 2004 Appl. Surf. Sci. 238 495
13. Lysenko V, Perichon S, Remaki B, Champagnon B and Barbier D 1999 J. Appl. Phys. 86 6841
14. Diligenti A, Nannini A, Pennelli G and Pieri F 1996 Appl. Phys. Lett. 68 687
15. Islam Md N, Pradhan A and Kumar S 2003 J. Appl. Phys. 93 1753
16. Islam Md N and Kumar S 2001 Appl. Phys. Lett. 78 715
17. Islam Md N, Pradhan A and Kumar S 2005 J. Appl. Phys. 98 024309
18. Islam Md N, Dobal P S, Bist H D and Kumar S 1998 Solid State Commun. 107 43
19. Islam Md N, Ram S K and Kumar S 2001 Low temperature electronic transport in porous silicon nanostructures Annual Proc. Electrochem. Soc. (San Francisco) ed M Cahay et al pp 169-76
20. Lee W H, Lee C, Kwon Y H, Hong C Y and Cho H Y 2000 Solid State Commun. 113 519
21. Pavesi L et al 1999 J. Appl. Phys. 86 6474
22. Mathur R G, Vivechana, Mehra R M, Mathur P C and Jain V K 1998 Thin Solid Films 312 254
23. Simons A J, Cox T I, Uren M J and Calcott P D J 1995 Thin Solid Films 255 12
24. Ben-Chorin M, Moller F and Koch F 1994 Phys. Rev. B 49 2981
25. Donoval D, Barus M and Zdimal M 1991 Solid State Electron. 34 1365
26. Roderick E H 1978 Metal Semiconductor Contacts (Oxford: Oxford University Press)
27. Rideout V L 1975 Solid State Electron. 18 541
28. Sullivan J P, Tung R T and Pinto M R 1991 J. Appl. Phys. 70 7403
29. Tung R T 1992 Phys. Rev. B 45 13509 and references therein
30. Kiziroglou M E, Zhukov A A, Li X, Gonzalez D C, de-Groot P A J and Bartlett P N 2006 Solid State Commun. 140 508 and references therein
31. Jensen N, Rau U, Hausner R M, Uppal S, Oberbeck L, Bergmann R B and Werner J H 2000 J. Appl. Phys. 87 2639
32. Sze S M 1982 Physics of Semiconductor Devices (New York: Wiley)
33. Andrews J M and Lepselter M P 1970 Solid State Electron. 13 1011
34. Ben-Chorin M, Moller F, Koch F, Schirmacher W and Eberhard M 1995 Phys. Rev. B 51 2199
35. Ciurea M L, Draghici M, Lazanu S, Iancu V, Nassiopoulou A, Ioannou V and Tsakiri V 2000 Appl. Phys. Lett. 76 3067
36. Suntao W, Yanhua W and Qihua S 2000 Appl. Surf. Sci. 158 268
37. Amisola G B, Behrensmeier R, Galligan J M, Otter F A, Namavar F and Kalkoran N M 1992 Appl. Phys. Lett. 61 2595
38. Lampert M A and Mark P 1970 Current Injection in Solids (New York: Academic)
39. Romstad F P and Veje E 1997 Phys. Rev. B 55 5220
40. Frederiksen J T, Melcher P G and Veje E 1998 Phys. Rev. B 58 8020