Temperature influence on photo-leakage-current characteristics of a-Si:H thin-film transistor

Solid-State Electronics

Volumn 54, Issue 6, 2010, Pages 642-645

  Tsao, S W ^a   Chang, T C ^a,b   Yang, P C ^a   Chen, S C ^a   Lu, J ^a,b,d   Wang, M C ^c   Huang, C M ^a   Wu, W C ^a   Kuo, W C ^a   Shi, Y ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^d NANJING UNIVERSITY   (China)

Author keywords

Amorphous silicon thin film transistors; Cryogenic temperature; Photo leakage current

Indexed keywords

A-SI:H; AMORPHOUS SILICON THIN-FILM TRANSISTOR; CRYOGENIC TEMPERATURES; CURRENT CHARACTERISTIC; CURRENT TRENDS; ELECTRICAL CHARACTERISTIC; HYDROGENATED AMORPHOUS SILICON; ON STATE CURRENT; PARASITIC RESISTANCES; RECOMBINATION RATE; TEMPERATURE INFLUENCE; TEMPERATURE OPERATION;

AMORPHOUS FILMS; CRYOGENICS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 77950297539     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.12.038     Document Type: Article

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