Epitaxial layer parameters estimation approach of silicon carbide schottky diodes

Sensor Letters

Volumn 7, Issue 5, 2009, Pages 707-711

  Salan, Tarek Ben ^a,b   Amairi, Mahbouba ^a   Sassi, Zina ^b   Morel, Hervé ^b  

^a UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Measurement; Modeling; Parameter estimation; Sensor; Silicon carbide

Indexed keywords

COMPONENT MODEL; MODELING; MODELING PARAMETERS; OUTPUT SIGNAL; PHYSICALLY BASED MODELS; SCHOTTKY DIODES; SENSOR APPLICATIONS; SENSOR BEHAVIOR; SILICON CARBIDE SCHOTTKY DIODES;

DIODES; MOBILE TELECOMMUNICATION SYSTEMS; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES; SENSORS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76249110491     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2009.1135     Document Type: Article

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