Influence of the front contact barrier height on the Indium Tin Oxide/hydrogenated p-doped amorphous silicon heterojunction solar cells

Thin Solid Films

Volumn 516, Issue 15, 2008, Pages 5087-5092

  Rached, D ^a   Mostefaoui, R ^a  

^a UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

Author keywords

Band bending; Current voltage J(V) characteristics; HIT solar cells; Potential barrier; Simulation

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; DOPING (ADDITIVES); INDIUM COMPOUNDS; SURFACE POTENTIAL; TIN OXIDES;

BAND BENDING; CURRENT-VOLTAGE; HETEROJUNCTION SOLAR CELLS; SURFACE POTENTIAL BARRIERS;

SOLAR CELLS;

EID: 43049147035     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.02.031     Document Type: Article

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