Studies on the temperature dependence of I-V and C-V characteristics of electron irradiated silicon photo-detectors

Solar Energy Materials and Solar Cells

Volumn 91, Issue 15-16, 2007, Pages 1521-1524

  Pattabi, Manjunatha ^a   Krishnan, Sheeja ^a   Sanjeev, Ganesh ^a  

^a MANGALORE UNIVERSITY   (India)

Author keywords

C V; Current transport; I V; Photo detector

Indexed keywords

CURRENT TRANSPORT; REVERSE BIAS; SILICON PHOTODETECTORS; SPACE CHARGE REGION;

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRON IRRADIATION; THERMAL EFFECTS;

SILICON SOLAR CELLS;

EID: 34447254287     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2007.04.016     Document Type: Article

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