In situ observation of compliance-current overshoot and its effect on resistive switching

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 246-248

  Wan, H J ^a   Zhou, P ^a   Ye, L ^a   Lin, Y Y ^a   Tang, T A ^a   Wu, H M ^b   Chi, M H ^b  

^a FUDAN UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

Compliance current; Overshoot; Parasitic capacitance; Resistive switching

Indexed keywords

COMPLIANCE CURRENT; CURRENT DEPENDENCE; CURRENT OVERSHOOT; IN-SITU; IN-SITU OBSERVATIONS; MEMORY DEVICE; ON-STATE RESISTANCE; PARASITIC CAPACITANCE; RESET CURRENTS; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS;

CAPACITANCE; FIELD EFFECT TRANSISTORS; SWITCHING SYSTEMS;

SWITCHING;

EID: 77649188644     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039694     Document Type: Article

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