SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

Correlation of Raman, electrical, and optical properties of high-κ, atomic layer deposited Al-doped TiO2

(4) Haspert, Lauren C a Banerjee, Parag a Henn Lecordier, Laurent a Rubloff, Gary W a

a UNIVERSITY OF MARYLAND (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; OPTICAL CORRELATION; OPTICAL PROPERTIES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

AL-DOPING; ANNEALED FILMS; AS DOPING; AS-DEPOSITED FILMS; ATOMIC LAYER DEPOSITED; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FILM STRUCTURE; HIGH DIELECTRIC CONSTANTS; LINE SHAPE; MICRO-STRUCTURAL; NANOCAPACITORS; PHASE CHANGE; PURE AL; STRONG CORRELATION; STRUCTURAL CHANGE; TIO;

ALUMINUM;

EID: 80051880188 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3610970 Document Type: Article

Times cited : (8)

References (37)

1
- 4544235448
- 0009-2665, 10.1021/cr00035a013
- A. L. Linsebigler, G. Q. Lu, and J. T. Yates, Chem. Rev. 0009-2665 95, 735 (1995). 10.1021/cr00035a013
- (1995) Chem. Rev. , vol.95 , pp. 735
- Linsebigler, A.L.¹ Lu, G.Q.² Yates, J.T.³

2
- 51649096269
- 0167-5729, 10.1016/S0167-5729(02)00100-0
- U. Diebold, Surf. Sci. Rep. 0167-5729 48, 53 (2003). 10.1016/S0167- 5729(02)00100-0
- (2003) Surf. Sci. Rep. , vol.48 , pp. 53
- Diebold, U.¹

3
- 36149011401
- 0034-6861, 10.1103/RevModPhys.31.646
- F. A. Grant, Rev. Mod. Phys. 0034-6861 31, 646 (1959). 10.1103/RevModPhys.31.646
- (1959) Rev. Mod. Phys. , vol.31 , pp. 646
- Grant, F.A.¹

4
- 25644443869
- 2 thin films on Ru and Si electrodes for memory capacitor applications
- DOI 10.1149/1.1943589
- W. D. Kim, J. Electrochem. Soc. 0013-4651 152, C552 (2005). 10.1149/1.1943589 (Pubitemid 41381135)
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.8
- Kim, W.D.¹ Hwang, G.W.² Kwon, O.S.³ Kim, S.K.⁴ Cho, M.⁵ Jeong, D.S.⁶ Lee, S.W.⁷ Seo, M.H.⁸ Hwang, C.S.⁹ Min, Y.-S.¹⁰ Cho, Y.J.¹¹

5
- 0030865462
- 0018-9383, 10.1109/16.554800
- S. A. Campbell, D. C. Gilmer, X. C. Wang, M. T. Hsieh, H. S. Kim, W. L. Gladfelter, and J. H. Yan, IEEE Trans. Electron Devices 0018-9383 44, 104 (1997). 10.1109/16.554800
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 104
- Campbell, S.A.¹ Gilmer, D.C.² Wang, X.C.³ Hsieh, M.T.⁴ Kim, H.S.⁵ Gladfelter, W.L.⁶ Yan, J.H.⁷

6
- 47049096034
- 0935-9648, 10.1002/adma.200701085
- S. K. Kim, G. J. Choi, S. Y. Lee, M. Seo, S. W. Lee, J. H. Han, H. S. Ahn, S. Han, and C. S. Hwang, Adv. Mater. 0935-9648 20, 1429 (2008). 10.1002/adma.200701085
- (2008) Adv. Mater. , vol.20 , pp. 1429
- Kim, S.K.¹ Choi, G.J.² Lee, S.Y.³ Seo, M.⁴ Lee, S.W.⁵ Han, J.H.⁶ Ahn, H.S.⁷ Han, S.⁸ Hwang, C.S.⁹

7
- 0035872897
- 0021-8979, 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

8
- 0034308507
- 0884-2914, 10.1557/JMR.2000.0299
- L. E. Depero, A. Marino, B. Allieri, E. Bontempi, L. Sangaletti, C. Casale, and M. Notaro, J. Mater. Res. 0884-2914 15, 2080 (2000). 10.1557/JMR.2000.0299
- (2000) J. Mater. Res. , vol.15 , pp. 2080
- Depero, L.E.¹ Marino, A.² Allieri, B.³ Bontempi, E.⁴ Sangaletti, L.⁵ Casale, C.⁶ Notaro, M.⁷

9
- 0037005926
- Phase transformation and grain growth of doped nanosized titania
- DOI 10.1016/S0928-4931(01)00409-X, PII S092849310100409X, Current trends in Nanotechnologies: From Materials to Systems
- Y. H. Zhang and A. Reller, Mater. Sci. Eng. C 19, 323 (2002). 10.1016/S0928-4931(01)00409-X (Pubitemid 34088779)
- (2002) Materials Science and Engineering C , vol.19 , Issue.1-2 , pp. 323-326
- Zhang, Y.-H.¹ Reller, A.²

10
- 31044455312
- High dielectric constant gate oxides for metal oxide Si transistors
- DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
- J. Robertson, Rep. Prog. Phys. 0034-4885 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
- (2006) Reports on Progress in Physics , vol.69 , Issue.2 , pp. 327-396
- Robertson, J.¹

11
- 46949112023
- 0897-4756, 10.1021/cm800280t
- S. K. Kim, G. J. Choi, J. H. Kim, and C. S. Hwang, Chem. Mater. 0897-4756 20, 3723 (2008). 10.1021/cm800280t
- (2008) Chem. Mater. , vol.20 , pp. 3723
- Kim, S.K.¹ Choi, G.J.² Kim, J.H.³ Hwang, C.S.⁴

12
- 0036647871
- 3 nanolaminates fabricated by atomic layer deposition: Growth and surface roughness measurements
- DOI 10.1016/S0040-6090(02)00427-3, PII S0040609002004273
- J. W. Elam, Z. A. Sechrist, and S. M. George, Thin Solid Films 0040-6090 414, 43 (2002). 10.1016/S0040-6090(02)00427-3 (Pubitemid 34862997)
- (2002) Thin Solid Films , vol.414 , Issue.1 , pp. 43-55
- Elam, J.W.¹ Sechrist, Z.A.² George, S.M.³

13
- 84986773666
- 0377-0486, 10.1002/jrs.1250070606
- T. Ohsaka, F. Izumi, and Y. Fujiki, J. Raman Spectrosc. 0377-0486 7, 321 (1978). 10.1002/jrs.1250070606
- (1978) J. Raman Spectrosc. , vol.7 , pp. 321
- Ohsaka, T.¹ Izumi, F.² Fujiki, Y.³

14
- 21744444606
- Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
- DOI 10.1063/1.1940727, 121301
- R. L. Puurunen, J. Appl. Phys. 0021-8979 97, 121301 (2005). 10.1063/1.1940727 (Pubitemid 40940570)
- (2005) Journal of Applied Physics , vol.97 , Issue.12 , pp. 1-52
- Puurunen, R.L.¹

15
- 77953325339
- 0003-6951
- K. I. Seo, D. I. Lee, P. Pianetta, H. Kim, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951 89, 3 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 3
- Seo, K.I.¹ Lee, D.I.² Pianetta, P.³ Kim, H.⁴ Saraswat, K.C.⁵ McIntyre, P.C.⁶

16
- 1242320224
- 0897-4756, 10.1021/cm0304546
- M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. 0897-4756 16, 639 (2004). 10.1021/cm0304546
- (2004) Chem. Mater. , vol.16 , pp. 639
- Groner, M.D.¹ Fabreguette, F.H.² Elam, J.W.³ George, S.M.⁴

17
- 0033715072
- 0040-6090, 10.1016/S0040-6090(00)01015-4
- D. Mergel, D. Buschendorf, S. Eggert, R. Grammes, and B. Samset, Thin Solid Films 0040-6090 371, 218 (2000). 10.1016/S0040-6090(00)01015-4
- (2000) Thin Solid Films , vol.371 , pp. 218
- Mergel, D.¹ Buschendorf, D.² Eggert, S.³ Grammes, R.⁴ Samset, B.⁵

18
- 0035472027
- Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
- DOI 10.1109/16.954476, PII S0018938301083691
- T. Z. Ma, IEEE Trans. Electron Devices 0018-9383 48, 2348 (2001). 10.1109/16.954476 (Pubitemid 33018201)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.10 , pp. 2348-2356
- Ma, T.¹ Campbell, S.A.² Smith, R.³ Hoilien, N.⁴ He, B.⁵ Gladfelter, W.L.⁶ Hobbs, C.⁷ Buchanan, D.⁸ Taylor, C.⁹ Gribelyuk, M.¹⁰ Tiner, M.¹¹ Coppel, M.¹² Lee, J.J.¹³

19
- 77957338723
- 1380-2224, 10.1007/s10934-009-9281-8
- S. Y. Liu, G. C. Liu, and Q. G. Feng, J. Porous Mater. 1380-2224 17, 197 (2010). 10.1007/s10934-009-9281-8
- (2010) J. Porous Mater. , vol.17 , pp. 197
- Liu, S.Y.¹ Liu, G.C.² Feng, Q.G.³

20
- 0039806065
- 0028-0836, 10.1038/160026a0
- R. S. Krishnan, Nature (London) 0028-0836 160, 26 (1947). 10.1038/160026a0
- (1947) Nature (London) , vol.160 , pp. 26
- Krishnan, R.S.¹

21
- 31544472063
- 2- I. phase transformation at the surface and in the bulk
- DOI 10.1021/jp0552473
- J. Zhang, M. J. Li, Z. C. Feng, J. Chen, and C. Li, J. Phys. Chem. B 1089-5647 110, 927 (2006). 10.1021/jp0552473 (Pubitemid 43164717)
- (2006) Journal of Physical Chemistry B , vol.110 , Issue.2 , pp. 927-935
- Zhang, J.¹ Li, M.² Feng, Z.³ Chen, J.⁴ Li, C.⁵

22
- 33846014245
- 0377-0486, 10.1002/jrs.1566
- S. Balaji, Y. Djaoued and J. Robichaud, J. Raman Spectrosc. 0377-0486 37, 1416 (2006). 10.1002/jrs.1566
- (2006) J. Raman Spectrosc. , vol.37 , pp. 1416
- Balaji, S.¹ Djaoued, Y.² Robichaud, J.³

23
- 0018470221
- DOI 10.1016/0038-1098(79)90648-3
- T. Ohsaka, S. Yamaoka, and O. Shimomura, Solid State Commun. 0038-1098 30, 345 (1979). 10.1016/0038-1098(79)90648-3 (Pubitemid 10405425)
- (1979) Solid State Communications , vol.30 , Issue.6 , pp. 345-347
- Ohsaka, T.¹ Yamaoka, S.² Shimomura O³

24
- 0000200810
- 1089-5647, 10.1021/jp962747a
- S. Kelly, F. H. Pollak, and M. Tomkiewicz, J. Phys. Chem. B 1089-5647 101, 2730 (1997). 10.1021/jp962747a
- (1997) J. Phys. Chem. B , vol.101 , pp. 2730
- Kelly, S.¹ Pollak, F.H.² Tomkiewicz, M.³

25
- 0032484454
- 0003-6951
- D. Bersani, P. P. Lottici, and X. Z. Ding, Appl. Phys. Lett. 0003-6951 72, 73 (1997).
- (1997) Appl. Phys. Lett. , vol.72 , pp. 73
- Bersani, D.¹ Lottici, P.P.² Ding, X.Z.³

26
- 0034187380
- 1071-1023, 10.1116/1.591472
- J. Robertson, J. Vac. Sci. Technol. B 1071-1023 18, 1785 (2000). 10.1116/1.591472
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785
- Robertson, J.¹

27
- 0031213381
- 0040-6090, 10.1016/S0040-6090(97)00135-1
- J. Aarik, A. Aidla, A. -A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films 0040-6090 305, 270 (1997). 10.1016/S0040-6090(97)00135-1
- (1997) Thin Solid Films , vol.305 , pp. 270
- Aarik, J.¹ Aidla, A.² Kiisler, A.-A.³ Uustare, T.⁴ Sammelselg, V.⁵

28
- 70249128982
- 0584-8539, 10.1016/j.saa.2009.07.018
- M. Vishwas, S. K. Sharma, K. N. Rao, S. Mohan, K. V. A. Gowda, and R. P. S. Chakradhar, Spectrochim. Acta, Part A 0584-8539 74, 839 (2009). 10.1016/j.saa.2009.07.018
- (2009) Spectrochim. Acta, Part A , vol.74 , pp. 839
- Vishwas, M.¹ Sharma, S.K.² Rao, K.N.³ Mohan, S.⁴ Gowda, K.V.A.⁵ Chakradhar, R.P.S.⁶

29
- 74249104392
- 0040-6090, 10.1016/j.tsf.2009.08.028
- T. Gougousi and J. W. Lacis, Thin Solid Films 0040-6090 518, 2006 (2010). 10.1016/j.tsf.2009.08.028
- (2010) Thin Solid Films , vol.518 , pp. 2006
- Gougousi, T.¹ Lacis, J.W.²

30
- 80051905819
- 0003-6951
- L. Q. Zhu, L. D. Zhang, and Q. Fang, Appl. Phys. Lett. 0003-6951 91, 3 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 3
- Zhu, L.Q.¹ Zhang, L.D.² Fang, Q.³

31
- 0032516989
- Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
- DOI 10.1063/1.122191, PII S0003695198046373
- G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett. 0003-6951 73, 1517 (1998). 10.1063/1.122191 (Pubitemid 128671900)
- (1998) Applied Physics Letters , vol.73 , Issue.11 , pp. 1517-1519
- Alers, G.B.¹ Werder, D.J.² Chabal, Y.³ Lu, H.C.⁴ Gusev, E.P.⁵ Garfunkel, E.⁶ Gustafsson, T.⁷ Urdahl, R.S.⁸

32
- 13844256778
- 3 on hydrogen-terminated Si substrate
- DOI 10.1016/j.tsf.2004.09.035, PII S004060900401377X
- S. C. Ha, E. Choi, S. H. Kim, and J. S. Roh, Thin Solid Films 0040-6090 476, 252 (2005). 10.1016/j.tsf.2004.09.035 (Pubitemid 40245066)
- (2005) Thin Solid Films , vol.476 , Issue.2 , pp. 252-257
- Ha, S.-C.¹ Choi, E.² Kim, S.-H.³ Roh, J.S.⁴

33
- 0038238873
- 0035-001X
- G. Gutierrez, Rev. Mex. Fis. 0035-001X 48, 60 (2002).
- (2002) Rev. Mex. Fis. , vol.48 , pp. 60
- Gutierrez, G.¹

34
- 0024611632
- 0002-7820, 10.1111/j.1151-2916.1989.tb06128.x
- O. Yamaguchi and Y. Mukaida, J. Am. Ceram. Soc. 0002-7820 72, 330 (1989). 10.1111/j.1151-2916.1989.tb06128.x
- (1989) J. Am. Ceram. Soc. , vol.72 , pp. 330
- Yamaguchi, O.¹ Mukaida, Y.²

35
- 70449700098
- 0003-6951, 10.1063/1.3261754
- M. I. Ahmad and S. S. Bhattacharya, Appl. Phys. Lett. 0003-6951 95, 191906 (2009). 10.1063/1.3261754
- (2009) Appl. Phys. Lett. , vol.95 , pp. 191906
- Ahmad, M.I.¹ Bhattacharya, S.S.²

36
- 0032606526
- 0021-8979, 10.1063/1.370817
- P. C. Joshi and M. W. Cole, J. Appl. Phys. 0021-8979 86, 871 (1999). 10.1063/1.370817
- (1999) J. Appl. Phys. , vol.86 , pp. 871
- Joshi, P.C.¹ Cole, M.W.²

37
- 0343962756
- Overview No. 137: grain boundaries in dielectric and mixed-conducting ceramics
- DOI 10.1016/S1359-6454(99)00367-5
- R. Waser and R. Hagenbeck, Acta Mater. 1359-6454 48, 797 (2000). 10.1016/S1359-6454(99)00367-5 (Pubitemid 30563214)
- (2000) Acta Materialia , vol.48 , Issue.4 , pp. 797-825
- Waser, R.¹ Hagenbeck, R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.