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Volumn 80, Issue 1, 2006, Pages 207-218
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Investigation on etch characteristics of GeSbTe thin films for phase-change memory
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
DC GENERATOR MOTORS;
INDUCTIVELY COUPLED PLASMA;
MASKS;
OPTIMIZATION;
PHOTORESISTS;
REACTIVE ION ETCHING;
THIN FILMS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ANISOTROPIC ETCHING;
ETCH RATES;
PHASE-CHANGE MEMORY;
PHOTORESIST MASKS;
GERMANIUM COMPOUNDS;
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EID: 33745763280
PISSN: 10584587
EISSN: 16078489
Source Type: Conference Proceeding
DOI: 10.1080/10584580600657674 Document Type: Article |
Times cited : (20)
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References (11)
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