Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2/SiO2 gate stacks

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2404-2407

  Barraud, S ^a   Thevenod, L ^a   Casse M ^a   Bonno, O ^a   Mouis, M ^b  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

Author keywords

Effective electron mobility; HfO2; High k dielectric; Modeling

Indexed keywords

COMPUTER SIMULATION; COULOMB INTERACTIONS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS;

GATE STACK; HIGH-K DIELECTRIC; KUBO-GREENWOOD APPROACH; MOBILITY DEGRADATION;

MOSFET DEVICES;

EID: 34248672292     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.032     Document Type: Article

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