The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1874-1877

  Negara, M A ^a   Cherkaoui, K ^a   Majhi, P ^b   Young, C D ^b   Tsai, W ^c   Bauza, D ^d   Ghibaudo, G ^d   Hurley, P K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

^d IMEP LAHC   (France)

Author keywords

Charge trapping; High k; Interface state density; Mobility

Indexed keywords

DEGRADATION; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; PHONONS; SCATTERING; THICK FILMS; TITANIUM NITRIDE;

COULOMB SCATTERING; FIELD MOBILITY; STATE DENSITY; TRANSIENT CHARGE TRAPPING;

MOSFET DEVICES;

EID: 34249095848     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.108     Document Type: Article

References (12)

1. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros M. Metz, IEEE Electron Dev. Lett. 25 (2004) 408-410.
2. O. Weber, M. Casse, L. Thevenod, F. Ducroquet, T. Ernst, B. Guillaumot, S. Deleonibus, Proc. ESSDERC 2006, 379-382.
3. Fischetti M.V., Neumayer D.A., and Cartier E.A. J. Appl. Phys. 90 (2001) 4587-4608
4. K. Romanjek, F. Andrieu, T. Ernst and G. Ghibaudo, 6th European Workshop on Low Temperature, Electronics (WOLTE) (2004).
5. Zhu W.J., and Ma T.P. IEEE Electron Dev. Lett. 25 (2004) 89-91
6. Sim J.H., Song S.C., Kirsch P.D., Young C.D., Choi R., Kwong D.L., Lee B.H., and Bersuker G. Microelectr. Eng. 80 (2005) 218-221
7. Lime F., Guiducci C., Clerc R., Ghibaudo G., Leroux C., and Ernst T. Solid-St. Electron. 47 (2003) 1147-1153
8. Masson P., Autran J.L., and Brini J. IEEE Electron Dev. Lett. 20 (1999) 92-94
9. Bauza D. IEEE Electron Dev. Lett. 23 (2002) 658
10. Lime F., Oshima K., Casse M., Ghibaudo G., Cristoloveanu S., Guillaumot B., and Iwai H. Solid-State Electron. 47 (2003) 1617-1621
11. Casse M., Cassé M., Thevenod L., Guillaumot B., Tosti L., Martin F., Mitard J., Weber O., Andrieu F., and Ernst T. IEEE Trans. Electron Dev. 53 (2006) 759-768
12. Ono M., Ishihara T., and Nishiyama A. IEEE Trans. Electron Dev. 51 (2004) 732-740