Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1950-1953

  Oktyabrsky, S ^a   Tokranov, V ^a   Koveshnikov, S ^a   Yakimov, M ^a   Kambhampati, R ^a   Bakhru, H ^a   Moore, R ^a   Tsai, W ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

81.15.Hi; 85.30.Tv; A1. Interfaces; A3. Molecular beam epitaxy; B1. Arsenates; B1. Oxides; B2. Semiconducting III V materials; B3. Field effect transistors

Indexed keywords

CRYSTAL GROWTH; HAFNIUM COMPOUNDS; LOGIC GATES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PASSIVATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES;

81.15.HI; 85.30.TV; A1. INTERFACES; A3. MOLECULAR BEAM EPITAXY; B1. ARSENATES; B1. OXIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 63349085439     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.037     Document Type: Article

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