On the thermal oxidation of AlInN/AlN/GaN heterostructures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2213-2215

  Eickelkamp, Martin ^a   Weingarten, Martin ^a   Rahimzadeh Khoshroo, Lars ^a   Ketteniss, Nico ^a   Behmenburg, Hannes ^a,b   Heuken, Michael ^a,b   Kalisch, Holger ^a   Jansen, Rolf H ^a   Vescan, Andrei ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

AlInN; Gate leakage current; MOSHFET; Oxidation

Indexed keywords

ALINN; ANNEALING TEMPERATURES; GATE DIODES; GATE OXIDE; GATE-LEAKAGE CURRENT; MIS-HFET; MOSHFET; OXIDATION TIME; OXIDE THICKNESS; OXYGEN ATOM; PROCESSING WINDOWS; REVERSE LEAKAGE CURRENT; SQUARE ROOTS; THERMAL OXIDATION; THREE ORDERS OF MAGNITUDE;

CARRIER MOBILITY; CRYSTALS; GATE DIELECTRICS; LEAKAGE CURRENTS;

OXIDATION;

EID: 79960732518     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000926     Document Type: Article

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