Characterization of the thermal impact of Cu-Cu bonds achieved using TSVs on hot spot dissipation in 3D stacked ICs

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 861-868

  Oprins, H ^a   Cherman, V ^a   Vandevelde, B ^a   Torregiani, C ^b   Stucchi, M ^a   Van Der Plas, G ^a   Marchal, P ^a   Beyne, E ^a  

^a IMEC   (Belgium)

^b QUALCOMM INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D ICS; ELECTRONIC SYSTEMS; EXPERIMENTAL SETUP; HIGHER TEMPERATURES; HOT SPOT; INTERCONNECT STRUCTURES; PERFORMANCE ENHANCEMENTS; STACKED DIE; TEMPERATURE PEAKS; TEMPERATURE PROFILES; TEST CHIPS; THERMAL BEHAVIORS; THERMAL HEATERS; THERMAL IMPACTS; THERMAL MODEL; THERMAL SPREADING; THERMALLY CONDUCTIVE ADHESIVES;

DIES; ENERGY DISSIPATION;

THREE DIMENSIONAL;

EID: 79960420837     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898612     Document Type: Conference Paper

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