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Volumn 42, Issue 5, 2010, Pages 1456-1462
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Novel attributes and design considerations of source and drain regions in carbon nanotube transistors
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Author keywords
Carbon nanotube; Field effect transistor; Nonequilibrium Green's function (NEGF); Transcondctance
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Indexed keywords
CARBON NANOTUBE FIELD EFFECT TRANSISTORS;
CARBON NANOTUBE TRANSISTORS;
DESIGN CONSIDERATIONS;
DINGER EQUATION;
DRAIN CONDUCTANCE;
NON-EQUILIBRIUM GREEN'S FUNCTION;
OFF CURRENT;
QUANTUM SIMULATIONS;
SELF-CONSISTENT SOLUTION;
SIMULATION RESULT;
SOURCE AND DRAINS;
SUBTHRESHOLD SWING;
CARBON NANOTUBES;
DRAIN CURRENT;
FIELD EFFECT TRANSISTORS;
QUANTUM CHEMISTRY;
GREEN'S FUNCTION;
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EID: 77649187530
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2009.11.118 Document Type: Article |
Times cited : (8)
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References (17)
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