The influence of surface oxide on the growth of metal/semiconductor nanowires

Nano Letters

Volumn 11, Issue 7, 2011, Pages 2753-5758

  Lu, Kuo Chang ^a   Wu, Wen Wei ^b   Ouyang, Hao ^c   Lin, Yung Chen ^d   Huang, Yu ^d   Wang, Chun Wen ^b   Wu, Zheng Wei ^a   Huang, Chun Wei ^b   Chen, Lih J ^c   Tu, K N ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

in situ TEM; molecular dynamics simulations; nanoheterostructures; nanokinetics; silicide nanowires; Surface oxide

Indexed keywords

IN-SITU TEM; MOLECULAR DYNAMICS SIMULATIONS; NANO-HETEROSTRUCTURES; NANOKINETICS; SILICIDE NANOWIRES; SURFACE OXIDE;

EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR DYNAMICS; NANOWIRES; PLATINUM; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; SILICON WAFERS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

NANOTECHNOLOGY;

NANOWIRE; OXIDE; PLATINUM; SILICON;

ARTICLE; CHEMISTRY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY;

NANOTECHNOLOGY; NANOWIRES; OXIDES; PARTICLE SIZE; PLATINUM; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 79960216244     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201037m     Document Type: Article

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