First-principles analysis of interfacial nanoscaled oxide layers of bonded N - And P -type GaAs wafers

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Ouyang, Hao ^a   Chiou, Hsiao Hao ^a   Wu, Yewchung Sermon ^b   Cheng, Ji Hao ^b   Ouyang, Wen ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MICROSTRUCTURAL EVOLUTION; NANOSTRUCTURES; SEMICONDUCTING GALLIUM ARSENIDE;

ATOMIC ARRANGEMENTS; ELECTRICAL PERFORMANCE; FIRST-PRINCIPLES CALCULATIONS; MICROSTRUCTURAL FEATURES;

WAFER BONDING;

EID: 34547294938     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748335     Document Type: Article

References (24)

1. R. M. Martin, Electronic Structure (Cambridge University Press, Cambridge, 2004), p. 54.
2. G. L. Hart, V. Blum, M. J. Walorski, and A. Zunger, Nat. Mater. 1476-1122 10.1038/nmat1374 4, 391 (2005).
3. J. H. He, T. H. Wu, C. L. Hsin, K. M. Li, L. J. Chen, Y. L. Chueh, L. J. Chou, and Z. L. Wang, Small 1613-6810 10.1002/smll.200500210 2, 116 (2006).
4. E. J. Kirkland, Advanced Computing in Electron Microscopy (Plenum, New York, 1998).
5. T. Akatsu, A. Plößs, H. Stenzel, and U. Gösele, J. Appl. Phys. 86, 7146 (1999).
6. Q. -Y. Tong, Q. Gan, G. Hudson, G. Fountain, and P. Enquist, Appl. Phys. Lett. 0003-6951 10.1063/1.1644615 84, 732 (2004).
7. Y. S. Wu, R. S. Feigelson, R. K. Route, D. Zheng, L. A. Gordon, M. M. Fejer, and R. Byer, J. Electrochem. Soc. 0013-4651 10.1149/1.1838262 145, 366 (1998).
8. T. Akatsu, A. Plößs, H. Stenzel, and U. Gösele, J. Appl. Phys. 0021-8979 10.1063/1.371804 86, 7146 (1999).
9. T. R. Chung, L. Yang, N. Hosoda, H. Takagi, and T. Suga, Appl. Surf. Sci. 117-118, 808 (1997). 0169-4332
10. G. Kästner, T. Akatsu, S. Senz, A. Plößl, and U. Gösele, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s003390050004 70, 13 (2000).
11. H. Ouyang, YC Sermon Wu, H.-H. Chiou, C.-C. Liu, J.-H. Cheng, W. Ouyang, S.-H. Chiou, S.-T. Shiue, Y. L. Chueh, and L. J. Chou, Appl. Phys. Lett. 0003-6951 10.1063/1.2185611 88, 112112 (2006).
12. P. C. Liu, C. L. Lu, YC Sermon Wu, J.-H. Cheng, and H. Ouyang, Appl. Phys. Lett. 0003-6951 10.1063/1.1823592 85, 4831 (2004).
13. Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, and M. Kondow, Appl. Phys. Lett. 0003-6951 10.1063/1.114053 66, 451 (1995).
14. G. Kresse and J. Hafner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.558 47, 558 (1993).
15. G. Kresse and J. Furthmüller, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54.11169 54, 11169 (1996).
16. R. Kilaas and R. Gronsky, Ultramicroscopy 0304-3991 10.1016/0304-3991(85) 90073-7 16, 193 (1985).
17. F. Shi, K. L. Chang, J. Epple, C. F. Xu, K. Y. Cheng, and K. C. Hsieh, J. Appl. Phys. 0021-8979 10.1063/1.1522484 92, 7544 (2002).
18. H. Ouyang, YC Sermon Wu, J.-H. Cheng, C. L. Lu, S.-H. Chiou, and W. Ouyang, Appl. Phys. Lett. 0003-6951 10.1063/1.2198511 88, 172104 (2006).
19. A. Taguchi and H. Kageshima, Phys. Rev. B 0163-1829 10.1103/PhysRevB.60. 5383 60, 5383 (1999).
20. K. Y. Ahn, R. Stengl, T. Y. Tan, and U. Gösele, J. Appl. Phys. 0021-8979 10.1063/1.343141 65, 561 (1989).
21. X. Zhao, D. Ceresoli, and D. Vanderbilt, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.085107 71, 085107 (2005).
22. D. Weaire and M. F. Thorpe, Phys. Rev. B 4, 2508 (1971).
23. M. Städele, M. Moukara, J. A. Majewski, P. Vogl, and A. Görling, Phys. Rev. B 0163-1829 10.1103/PhysRevB.59.10031 59, 10031 (1999).
24. W. Kohn and L. J. Sham, Phys. Rev. 0031-899X 10.1103/PhysRev.140.A1133 140, A1133 (1965).