Engineering and metrology of epitaxial graphene

Solid State Communications

Volumn 151, Issue 16, 2011, Pages 1094-1099

  Tzalenchuk, Alexander ^a   Lara Avila, Samuel ^b   Cedergren, Karin ^b   Syväjärvi, Mikael ^c   Yakimova, Rositza ^c   Kazakova, Olga ^a   Janssen, T J B M ^a   Moth Poulsen, Kasper ^d   Bjørnholm, Thomas ^e   Kopylov, Sergey ^f   Falko, Vladimir ^f   Kubatkin, Sergey ^b  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e UNIVERSITY OF COPENHAGEN   (Denmark)

^f LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

A. Graphene; D. Photochemical gate; D. Quantum Hall effect; E. Metrology

Indexed keywords

A. GRAPHENE; D. PHOTOCHEMICAL GATE; E. METROLOGY; EPITAXIAL GRAPHENE; QUANTUM HALL EFFECT; QUANTUM HALL RESISTANCE; RECENT PROGRESS;

EPITAXIAL GROWTH; GRAPHENE; HALL EFFECT; SILICON CARBIDE; UNITS OF MEASUREMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960056369     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.05.020     Document Type: Article

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