Growth morphology and energy level alignment of pentacene films on SiO 2 surface treated with self-assembled monolayer

Current Applied Physics

Volumn 11, Issue 5, 2011, Pages 1168-1172

  Lee, Young Mi ^a   Kim, Jeong Won ^b,c   Min, Hyegeun ^b   Lee, Tae Geol ^b,c   Park, Yongsup ^a  

^a Kyung Hee University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c University of Science and Technology (UST)   (South Korea)

Author keywords

Ionization potential; Octadecyltrichlorosilane; PEEM; Pentacene; UPS

Indexed keywords

DOMAIN SIZE; ELECTRONIC ENERGY LEVELS; ENERGY LEVEL ALIGNMENT; GROWTH MORPHOLOGY; HIGHEST OCCUPIED MOLECULAR ORBITAL; INTERFACIAL DIPOLES; OCTADECYLTRICHLOROSILANE; PEEM; PENTACENE FILM; PENTACENE LAYERS; PENTACENE THICKNESS; PENTACENE THIN FILMS; PENTACENES; PHOTOEMISSION ELECTRON MICROSCOPY; SIMULTANEOUS MEASUREMENT; STANDING-UP; STRONG INTERACTION; UPS; WEAK INTERACTIONS;

ALIGNMENT; EMISSION SPECTROSCOPY; IONIZATION POTENTIAL; MOLECULAR ORBITALS; MORPHOLOGY; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS; SILICON OXIDES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 79959785388     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.02.013     Document Type: Article

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