Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

Applied Physics Letters

Volumn 86, Issue 23, 2005, Pages 1-3

  Kang, S J ^a   Yi, Y ^a   Kim, C Y ^a   Whang, C N ^a   Callcott, T A ^b   Krochak, K ^c   Moewes, A ^c   Chang, G S ^c  

^a Yonsei University   (South Korea)

^b UNIVERSITY OF TENNESSEE   (United States)

^c UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITY; OCTADECYLTRICHLOROSILANE (OTS); SOFT X-RAY EMISSION SPECTROSCOPY (XES); SOFT X-RAY FLUORESCENCE SPECTROSCOPY;

BINDING ENERGY; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FLUORESCENCE; SEMICONDUCTING ORGANIC COMPOUNDS; X RAY SPECTROSCOPY;

THIN FILM TRANSISTORS;

EID: 21244447055     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1944900     Document Type: Article

References (15)

1. J. M. Shaw and P. F. Seidler, IBM J. Res. Dev. 45, 3 (2001).
2. C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
3. S. J. Kang, M. Noh, D. S. Park, H. J. Kim, C. N. Whang, and C. H. Chang, J. Appl. Phys. 95, 2293 (2004).
4. J. Lee, J. H. Kim, and S. Im, Appl. Phys. Lett. 83, 2689 (2003).
5. S. J. Kang, K. B. Chung, D. S. Park, H. J. Kim, Y. K. Choi, M. H. Jang, M. Noh, and C. N. Whang, Synth. Met. 146, 351 (2004).
6. H. J. Kim, S. J. Kang, D. S. Park, K. B. Chung, M. H. Cho, M. Noh, and C. N. Whang, J. Korean Phys. Soc. 45, 935 (2004).
7. E. Becker, R. Parashkov, G. Ginev, D. Schneider, S. Hartmann, F. Brunetti, T. Dobbertin, D. Metzdorf, T. Riedl, H. H. Johannes, and W. Kowalsky, Appl. Phys. Lett. 83, 4044 (2003).
8. T. Yasuda, K. Fujita, H. Nakashima, and T. Tsutsui, Jpn. J. Appl. Phys., Part 1 42, 6614 (2003).
9. D. Knipp, R. A. Street, A. Volkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
10. M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, Appl. Phys. Lett. 81, 268 (2002).
11. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
12. D. A. Neamen, Semiconductor Physics and Devices, 2nd ed. (McGraw-Hill, New York, 1997), pp. 456-457.
13. E. Z. Kurmaev, M. I. Katsnelson, A. Moewes, M. Magnuson, J. -H Guo, S. M. Butorin, J. Nordgren, D. L. Ederer, and M. Iwami, J. Phys. 13, 3907 (2001).
14. R. Q. Zhang, W. C. Lu, C. S. Lee, L. S. Hung, and S. T. Lee, J. Chem. Phys. 116, 8827 (2002).
15. N. J. Watkins and Y. Gao, J. Appl. Phys. 94, 1289 (2003).