Effects of UV/ozone treatment of a polymer dielectric surface on the properties of pentacene thin films for organic transistors

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Han, Seung Jin ^a   Kim, Jae Hoon ^a   Kim, Jeong Won ^b   Min, Chang Ki ^b   Hong, Sa Hwan ^b   Kim, Dal Hyun ^b   Baek, Kyu Ha ^c   Kim, Gi Heon ^c   Do, Lee Mi ^c   Park, Y ^d  

^a Hanyang University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CONTACT ANGLE; DIELECTRIC DEVICES; DIELECTRIC SPECTROSCOPY; ELECTRON ENERGY LEVELS; MICROSCOPIC EXAMINATION; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; PHOTORESISTS; POLYMER FILMS; POLYMERS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE PROPERTIES; SURFACE TREATMENT; THICK FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET SPECTROSCOPY;

AFM MEASUREMENTS; AMERICAN INSTITUTE OF PHYSICS (AIP); ATOMIC FORCE MICROSCOPY (AFM); DEVICE MOBILITY; DIELECTRIC SURFACES; DIPOLE FIELDS; ENERGY LEVEL ALIGNMENT; GRAIN SIZES; GROWTH MORPHOLOGIES; HIGHEST-OCCUPIED MOLECULAR ORBITAL (HOMO); OFFSET VALUES; ORGANIC TRANSISTORS; PENTACENE (PEN); PENTACENE THIN FILMS; ULTRAVIOLET (UV); UV/OZONE TREATMENT; VACUUM LEVELS; WATER CONTACT ANGLE MEASUREMENT;

IMAGING TECHNIQUES;

EID: 47749137808     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951905     Document Type: Article

References (25)

1. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
2. H. E. Katz and Z. Bao, J. Phys. Chem. B 1089-5647 10.1021/jp992853n 104, 671 (2000).
3. Y. -Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 0018-9383 10.1109/16.605476 44, 1325 (1997).
4. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 0036-8075 10.1126/science.283.5403.822 283, 822 (1999).
5. N. J. Watkins, S. Zorba, and Y. Gao, J. Appl. Phys. 0021-8979 10.1063/1.1756211 96, 425 (2004).
6. N. J. Watkins and Y. Gao, J. Appl. Phys. 0021-8979 10.1063/1.1615298 94, 5782 (2003).
7. J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chem. Mater. 0897-4756 10.1021/cm049598q 16, 4543 (2004).
8. Y. Kato, S. Iba, R. Teramoto, T. Sekitani, T. Someya, H. Kawaguchi, and T. Sakurai, Appl. Phys. Lett. 0003-6951 10.1063/1.1739508 84, 3789 (2004).
9. V. Podzorov, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 0003-6951 10.1063/1.1560869 82, 1739 (2003).
10. S. Pyo, J. Choi, Y. Oh, H. Son, and M. H. Yi, Appl. Phys. Lett. 0003-6951 10.1063/1.2197939 88, 173501 (2006).
11. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw, Appl. Phys. Lett. 0003-6951 10.1063/1.121783 73, 108 (1998).
12. K. Shin, S. Y. Yang, C. Yang, H. Jeon, and C. E. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.2756321 91, 023508 (2007).
13. F. De Angelis, S. Cipolloni, L. Mariucci, and G. Fortunato, Appl. Phys. Lett. 0003-6951 10.1063/1.1931833 86, 203505 (2005).
14. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schütz, S. Maisch, F. Effenberger, M. Brunnbauer, and F. Stellacci, Nature (London) 0028-0836 10.1038/nature02987 431, 963 (2004).
15. M. McDowell, I. G. Hill, J. E. McDermott, S. L. Bernasek, and J. Schwartz, Appl. Phys. Lett. 0003-6951 10.1063/1.2173711 88, 073505 (2006).
16. D. Kumaki, M. Yahiro, Y. Inoue, and S. Tokitoa, Appl. Phys. Lett. 0003-6951 10.1063/1.2717552 90, 133511 (2007).
17. D. Guo, S. Entani, S. Ikeda, and K. Saiki, Chem. Phys. Lett. 0009-2614 10.1016/j.cplett.2006.08.009 429, 124 (2006).
18. H. Fukagawa, S. Kera, T. Kataoka, S. Hosoumi, Y. Watanabe, K. Kudo, and N. Ueno, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200601678 19, 665 (2007).
19. H. Fukagawa, H. Yamane, T. Kataoka, S. Kera, M. Nakamura, K. Kudo, and N. Ueno, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.245310 73, 245310 (2006).
20. H. Kakuta, T. Hirahara, I. Matsuda, T. Nagao, S. Hasegawa, N. Ueno, and K. Sakamoto, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.98.247601 98, 247601 (2007).
21. J. A. Hagen, W. Li, A. J. Steckla, and J. G. Grote, Appl. Phys. Lett. 0003-6951 10.1063/1.2197973 88, 171109 (2006).
22. N. J. Watkins and Y. Gao, J. Appl. Phys. 0021-8979 10.1063/1.1585112 94, 1289 (2003).
23. S. W. Cho, D. S. Park, W. C. Jang, M. -H. Cho, K. -H. Yoo, K. Jeong, C. -N. Whang, Y. Yi, and K. B. Chung, J. Appl. Phys. 0021-8979 10.1063/1.2779264 102, 064502 (2007).
24. K. -H. Baek, G. -H. Kim, and L. -M. Do (unpublished).
25. A. Di Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, and H. Maresch, Appl. Phys. Lett. 0003-6951 10.1063/1.1954901 86, 263501 (2005).