Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Sheu, Jinn Kong ^a   Lu, Y S ^a   Lee, Min Lum ^b   Lai, W C ^a   Kuo, C H ^c   Tun, Chun Ju ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ENERGY EFFICIENCY; GALLIUM NITRIDE; PERIODIC STRUCTURES; SEMICONDUCTOR DOPING; TRANSPARENCY;

INDIUM TIN OXIDE; LIGHT EXTRACTION; TRANSPARENT CONTACT LAYER (TCL);

LIGHT EMITTING DIODES;

EID: 34547350951     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753110     Document Type: Article

References (9)

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